Method for producing a mask for the lithographic projection of a pattern onto a substrate
    1.
    发明授权
    Method for producing a mask for the lithographic projection of a pattern onto a substrate 失效
    用于制造用于将图案的光刻投影到基板上的掩模的方法

    公开(公告)号:US07644389B2

    公开(公告)日:2010-01-05

    申请号:US11668565

    申请日:2007-01-30

    IPC分类号: G06F17/50 G03F1/00 G03C5/00

    CPC分类号: G03F7/70191 G03F1/00

    摘要: A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.

    摘要翻译: 布局被分解为部分图案。 为每个部分图案绘制中间掩模。 中间掩模在掩模步进器或扫描仪中逐渐用于投影到测试掩模上的共同图案中。 从测试掩模或使用掩模曝光的测试晶片确定线宽度分布LB(x,y),并将其转换成剂量校正的分布。 基于所计算的剂量校正来适应各个中间掩模的传输T(x,y)。 这可以使用分配给中间掩模并具有阴影结构元件的附加光学元件,或者通过激光引起的中间掩模本身的石英衬底中的遮光元件的后侧引入来实现。

    METHOD FOR PRODUCING A MASK FOR THE LITHOGRAPHIC PROJECTION OF A PATTERN ONTO A SUBSTRATE
    2.
    发明申请
    METHOD FOR PRODUCING A MASK FOR THE LITHOGRAPHIC PROJECTION OF A PATTERN ONTO A SUBSTRATE 失效
    用于生成用于将图案投影到基板上的掩模的掩模的方法

    公开(公告)号:US20070196744A1

    公开(公告)日:2007-08-23

    申请号:US11668565

    申请日:2007-01-30

    CPC分类号: G03F7/70191 G03F1/00

    摘要: A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.

    摘要翻译: 布局被分解为部分图案。 为每个部分图案绘制中间掩模。 中间掩模在掩模步进器或扫描仪中逐渐用于投影到测试掩模上的共同图案中。 从测试掩模或使用掩模曝光的测试晶片确定线宽度分布LB(x,y),并将其转换成剂量校正的分布。 基于所计算的剂量校正来适应各个中间掩模的传输T(x,y)。 这可以使用分配给中间掩模并具有阴影结构元件的附加光学元件,或者通过激光引起的中间掩模本身的石英衬底中的遮光元件的后侧引入来实现。