公开(公告)号：US20170287821A1

公开(公告)日：2017-10-05

申请号：US15244846

申请日：2016-08-23

申请人： Magnachip Semiconductor, Ltd.

发明人： Jae Sik CHOI ,  Si Hyeon GO ,  Jun Young HEO ,  Moon Taek SUNG ,  Dong Seong OH

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L23/373 ,  H01L25/18 ,  H01L23/00

CPC分类号： H01L23/49575 ,  H01L21/4875 ,  H01L23/3735 ,  H01L23/49531 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49562 ,  H01L24/14 ,  H01L24/48 ,  H01L24/85 ,  H01L25/18 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2224/45099

摘要： A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to the first body, a second terminal connected to the second body, and a third common terminal that connects the third body and the fourth body, wherein a length of the third common terminal is longer than that of the first and second terminals.