公开(公告)号：US10381474B2

公开(公告)日：2019-08-13

申请号：US15955444

申请日：2018-04-17

申请人： MACROBLOCK, INC.

发明人： Kung-Yen Lee ,  Chih-Fang Huang ,  Sheng-Chung Wang ,  Chia-Hui Cheng

IPC分类号： H01L29/76 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

摘要： A power semiconductor device includes a substrate, a main body and an electrode unit. The main body includes an active portion, an edge termination portion surrounding the active portion, and an insulating layer disposed on the edge termination portion. The edge termination portion includes a first-type semiconductor region, and a plurality of spaced-apart second-type semiconductor segments distributed in the first-type semiconductor region and arranged at intervals along a Y-direction directing from the insulating layer toward the substrate, and an X-direction directing from the active portion toward the edge termination portion. The electrode unit includes a first electrode and a second electrode.

公开(公告)号：US20180308974A1

公开(公告)日：2018-10-25

申请号：US15955444

申请日：2018-04-17

申请人： MACROBLOCK, INC.

发明人： Kung-Yen Lee ,  Chih-Fang Huang ,  Sheng-Chung Wang ,  Chia-Hui Cheng

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/7811 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/66712

摘要： A power semiconductor device includes a substrate, a main body and an electrode unit. The main body includes an active portion, an edge termination portion surrounding the active portion, and an insulating layer disposed on the edge termination portion. The edge termination portion includes a first-type semiconductor region, and a plurality of spaced-apart second-type semiconductor segments distributed in the first-type semiconductor region and arranged at intervals along a Y-direction directing from the insulating layer toward the substrate, and an X-direction directing from the active portion toward the edge termination portion. The electrode unit includes a first electrode and a second electrode.

公开(公告)号：US09865676B2

公开(公告)日：2018-01-09

申请号：US15359209

申请日：2016-11-22

申请人： Macroblock, Inc.

发明人： Chih-Fang Huang ,  Kung-Yen Lee ,  Chia-Hui Cheng ,  Sheng-Zhong Wang

IPC分类号： H01L29/02 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423 ,  H01L29/78 ,  H01L29/08

CPC分类号： H01L29/0619 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/36 ,  H01L29/42356 ,  H01L29/7811 ,  H01L29/7827

摘要： A power semiconductor device includes a substrate, a main body, and an electrode unit. The main body includes an active portion disposed on the substrate, an edge termination portion, and an insulating layer disposed on the edge termination portion. The edge termination portion includes first-type semiconductor region, a second-type semiconductor region and a top surface. The first-type semiconductor region is adjacent to the active portion and has a first-type doping concentration decreased from the top surface toward the substrate. The electrode unit includes a first electrode disposed on the insulating layer, and a second electrode disposed on the substrate.