公开(公告)号：US3806361A

公开(公告)日：1974-04-23

申请号：US20464172

申请日：1972-01-24

Applicant: MOTOROLA INC

Inventor： LEHNER L

IPC: H01L21/00 ,  H01L21/764 ,  H01L23/485 ,  B44D1/18 ,  B44D1/10

CPC classification number: H01L21/00 ,  H01L21/764 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S148/02 ,  Y10S148/028 ,  Y10S148/03 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S148/125 ,  H01L2924/00

Abstract: THE METHOD OF MAKING ELECTRICAL CONTACTS FOR AND PASSIVATING A SEMICONDUCTOR DEVICE INCLUDES THE STEPS OF DEPOSITING THEREOVER A LAYER OF POLYCRYSSTALLINE SILICON MATERIAL AND SELECTIVELY DOPING THE POLYCRYSTALLINE SILICON MATERIAL AT LOCATIONS WHEREAT THE ELECTRICAL CONNECTIONS ARE TO BE MADE TO RENDER IT CONDUCTIVE THEREAT. IN THE CASE OF SEMICONDUCTOR DEVICES HAVING A PASSIVATING LAYER OF SIO2 OR THE LIKE THEREOVER, THE SIO2 MUST FIRST BE REMOVED IN THOSE AREAS WHEREAT THE ELECTRICAL CONTACTS ARE TO BE FORMED.