Abstract:
A system has a first RF generator and a second RF generator. The first RF generator controls the frequency of the second RF generator. The first RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit scales the frequency of the first RF generator to control the frequency of the second RF generator.
Abstract:
A radio frequency sensor system includes a printed circuit board (PCB). The PCB includes a first exterior layer, a second exterior layer, a first interior layer, a second interior layer, and an inner perimeter that defines an aperture through the PCB. The PCB also includes a first loop. The first loop includes a first plurality of sensor pads coupled to a first plurality of vias by a first plurality of traces. The first plurality of sensor pads is arranged on the inner perimeter. The PCB also includes a second loop. The second loop includes a second plurality of sensor pads coupled to a second plurality of vias by a second plurality of traces. The second plurality of sensor pads is arranged on the inner perimeter. A core ring is embedded within the first interior layer proximal to the first plurality of sensor pads, the first plurality of vias, and the first plurality of traces. A center conductor, for carrying RF current, extends through the aperture. The first and second loops generate an electrical signal based on the first and second plurality of sensor pads, the first and second plurality of vias, the first and second plurality of traces, and the core ring.
Abstract:
Controlling a phase and/or a frequency of a RF generator. The RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit controls the phase and/or the frequency of a RF generator.
Abstract:
A power supply control system includes a power generator for providing a signal to a load. The power generator includes a power controller controlling a power amplifier. The power generator includes an adaptive controller for varying the output signal controlling the power amplifier. The adaptive controller compares an error between a measured output and a predicted output to determine adaptive values applied to the power controller. The power generator also includes a sensor that generates an output signal that is digitized and processed. The sensor signal is mixed with a constant K. The constant K is varied to vary the processing of the sensor output signal. The value K may be commutated based on the phase, frequency, or both phase and frequency, and the bandwidth of K is determined by coupled power in the sensor output signal.
Abstract:
A system for controlling RF power supplies applying power to a load, such as a plasma chamber, includes a master power supply and a slave power supply. The master power supply provides a control signal, such as a frequency and phase signal, to the slave power supply. The slave power supply receives the frequency and phase signal and also receives signals characteristic of the spectral emissions detected from the load. The slave RF power supply varies the phase and power of its RF output signal applied to the load. Varying the power controls the width of an ion distribution function, and varying the phase controls a peak of the ion distribution. Depending upon the coupling between the RF generators and the load, different spectral emissions are detected, including first harmonics, second harmonics, and, in the case of a dual frequency drive system, intermodulation distortion.
Abstract:
A radio frequency (RF) control system including a RF generator having a power amplifier that outputs a RF signal and a controller. A matching network receives the RF signal and generates at least one RF output signal. In a first mode of operation, the controller enables adjustment of the frequency of the RF signal and a tune element of the matching network to achieve an impedance match and in a second mode of operation the controller enables adjustment of only the tune element of the matching network to achieve an impedance match while the frequency is adjusted to a target frequency. The RF controls system operates in a continuous and pulse mode of operation.
Abstract:
Plasma ion energy distribution for ions having different masses is controlled by controlling the relationship between a base RF frequency and a harmonic RF frequency. By the controlling the RF power frequencies, characteristics of the plasma process may be changed based on ion mass. The ions that dominate etching may be selectively based upon whether an ion is lighter or heavier than other ions. Similarly, atomic layer etch processes may be controlled such that the process may be switched between a layer modification step and a layer etch step though adjustment of the RF frequencies. Such switching is capable of being performed within the same gas phase of the plasma process. The control of the RF power includes controlling the phase difference and/or amplitude ratios between a base RF frequency and a harmonic frequency based upon the detection of one or more electrical characteristics within the plasma apparatus.
Abstract:
Multiple harmonic frequency components are used for plasma excitation in a plasma process. Relative amplitude and/or phase shift between the different frequency components is controlled so as to provide desired ion energy plasma properties. The relative amplitude and/or phase shift may be controlled without direct and/or manual ion energy measurements. Rather, the ion energy within the plasma may be dynamically controlled by monitoring one or more electrical characteristics within the plasma apparatus, such as for example, impedance levels, electrical signals in the radio frequency (RF) generator, electrical signals in a the matching networks, and electrical signals in other circuits of the plasma processing apparatus. The monitoring and control of the ion energy may be accomplished dynamically during the plasma process so as to maintain a desired ion energy distribution.
Abstract:
A system for controlling RF power supplies applying power to a load, such as a plasma chamber, includes a master power supply and a slave power supply. The master power supply provides a control signal, such as a frequency and phase signal, to the slave power supply. The slave power supply receives the frequency and phase signal and also receives signals characteristic of the spectral emissions detected from the load. The slave RF power supply varies the phase and power of its RF output signal applied to the load. Varying the power controls the width of an ion distribution function, and varying the phase controls a peak of the ion distribution. Depending upon the coupling between the RF generators and the load, different spectral emissions are detected, including first harmonics, second harmonics, and, in the case of a dual frequency drive system, intermodulation distortion.
Abstract:
An RF generator in a dual frequency RF generation system. The RF generator detects IMD components resulting from interaction of the two frequencies. The IMD is reduced by adjusting the phase of the RF signal output by the RF generator. In various configurations, the IMD may also be reduced by applying a power adjustment value.