公开(公告)号：US20160351548A1

公开(公告)日：2016-12-01

申请号：US14723475

申请日：2015-05-28

Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

Inventor： Li-Yi CHEN ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Pei-Yu CHANG

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/44 ,  H01L21/66

CPC classification number: H01L22/20 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A manufacturing method of a light emitting diode (LED) display device includes forming at least one sub-pixel circuit on a substrate, forming a primary electrical pad and a first backup electrical pad electrically connected to the sub-pixel circuit, disposing a first micro light emitting device on the primary electrical pad and testing the first micro light emitting device.

Abstract translation: 一种发光二极管（LED）显示装置的制造方法，包括在基板上形成至少一个子像素电路，形成主电极焊盘和与子像素电路电连接的第一备用电焊盘，配置第一微型 发光器件，并测试第一微型发光器件。

公开(公告)号：US20170236760A1

公开(公告)日：2017-08-17

申请号：US15044117

申请日：2016-02-16

Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

IPC: H01L21/66 ,  H01L33/42 ,  H01L33/62 ,  H01L33/40

CPC classification number: H01L22/14 ,  G01R31/2635 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2933/0066

Abstract: A method for repairing a light-emitting diode (LED) lighting device is provided. The method includes the operations below. First, the LED lighting device is obtained. The LED lighting device includes a substrate having a top surface and a recess, a first bottom electrode disposed on the top surface and on a bottom surface of the recess, a second bottom electrode disposed on the top surface, an LED disposed in the recess and on the first bottom electrode, and a top transparent electrode disposed on the LED and the second bottom electrode. Then, a test is performed to know whether the first bottom electrode, the LED, the top transparent electrode, and the second bottom electrode form a part of an electrical loop. Finally, a connecting member is formed to electrically connect the first bottom electrode and the second bottom electrode if the electrical loop is open.

公开(公告)号：US20170036342A1

公开(公告)日：2017-02-09

申请号：US14816060

申请日：2015-08-03

Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

IPC: B25J7/00 ,  H01L21/683 ,  B25J15/00

CPC classification number: B25J7/00 ,  B25J15/0052 ,  B25J15/008 ,  B25J15/0085 ,  H01L21/6833 ,  H01L21/6835 ,  H01L24/75 ,  H01L24/95 ,  H01L24/97 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/75303 ,  H01L2224/7531 ,  H01L2224/75312 ,  H01L2224/75315 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/95001 ,  H01L2224/95136

Abstract: A transfer head array includes a body and a plurality of transfer heads. The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses. The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.

Abstract translation: 转印头阵列包括主体和多个转印头。 主体具有第一表面，与第一表面相对的第二表面和多个凹部。 第一表面具有至少一个夹持区域和至少一个干涉避免区域，并且凹部彼此分离并且设置在避免干扰区域中。 转印头位于夹紧区域上。

公开(公告)号：US20160072012A1

公开(公告)日：2016-03-10

申请号：US14940123

申请日：2015-11-12

Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/0079 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/145 ,  H01L33/38 ,  H01L33/44 ,  H01L2224/83191 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.

Abstract translation: 发光二极管（LED）包括第一类型半导体层，第二类型半导体层，电流控制结构，第一电极和第二电极。 第二类型半导体层与第一类型半导体层接合。 电流控制结构与第一类型半导体层结合，电流控制结构在其中具有至少一个电流注入区。 第一电极通过电流控制结构的电流注入区与第一类型半导体层电耦合。 第二电极与第二类型半导体层电耦合。

公开(公告)号：US20150349205A1

公开(公告)日：2015-12-03

申请号：US14718106

申请日：2015-05-21

Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

IPC: H01L33/38 ,  H01L33/14

CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/44

Abstract: A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a first edge isolation structure, a first electrode, and a second electrode. The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.

Abstract translation: 微发光二极管（micro-LED）包括第一类型半导体层，第二类型半导体层，第一边缘隔离结构，第一电极和第二电极。 第二类型半导体层和第一边缘隔离结构与第一类型半导体层接合。 第一电极与第一类型半导体层电耦合。 第一电极上的第一类型半导体层的边缘的垂直投影的至少一部分与第一电极重叠。 第一边缘隔离结构至少部分地位于第一类型半导体层的一部分上。 第二电极与第二类型半导体层电耦合。

公开(公告)号：US20150349200A1

公开(公告)日：2015-12-03

申请号：US14701514

申请日：2015-04-30

Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/40

CPC classification number: H01L33/145 ,  H01L25/0753 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first current controlling layer, a first electrode, and a second electrode. The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.

Abstract translation: 微发光二极管（micro-LED）包括第一类型半导体层，第二类型半导体，第一电流控制层，第一电极和第二电极。 第二类型半导体层和第一电流控制层与第一类型半导体层接合。 第一电流控制层在其中具有至少一个开口。 第一电极通过开口与第一类型半导体层电耦合。 第二电极与第二类型半导体层电耦合。 第一电极和第二电极中的至少一个具有透光部分。 第一电流控制层在第一电极和第二电极之一上的垂直投影与透光部重叠。 透光部分是透明或半透明的。

公开(公告)号：US20170278760A1

公开(公告)日：2017-09-28

申请号：US15080607

申请日：2016-03-25

Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

IPC: H01L21/66

CPC classification number: H01L22/22 ,  H01L21/67144 ,  H01L21/67271 ,  H01L21/6831 ,  H01L21/6838 ,  H01L22/14 ,  H01L25/0753

Abstract: A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.

公开(公告)号：US20160064594A1

公开(公告)日：2016-03-03

申请号：US14874467

申请日：2015-10-04

Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

IPC: H01L33/00 ,  H01L33/60

CPC classification number: H01L33/0079 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/025 ,  H01L33/145 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46

Abstract: A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer.

Abstract translation: 发光二极管（LED）包括第一类型半导体层，第二类型半导体层，第一电流控制结构和第一电极。 第二类型半导体层与第一类型半导体层接合。 第二类型半导体层具有第一区域和第二区域，其中第一区域具有第一穿透位错密度，第二区域具有第二穿透位错密度，并且第一穿透位错密度大于第二穿透位错密度 。 第一电流控制结构与第一类型半导体层接合并且其中具有至少一个第一电流注入区，其中第一电流控制结构上的第二区的垂直投影至少部分地与第一电流注入 区。 第一电极与第一类型半导体层电耦合。