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    METHOD FOR TRANSFERRING SEMICONDUCTOR STRUCTURE
    1.
    发明申请
    METHOD FOR TRANSFERRING SEMICONDUCTOR STRUCTURE 有权

    公开(公告)号：US20180053684A1

    公开(公告)日：2018-02-22

    申请号：US15599482

    申请日：2017-05-19

    Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

    Inventor： Shih-Chyn LIN ,  Li-Yi CHEN

    IPC: H01L21/768 ,  H01L21/30 ,  H01L21/02

    CPC classification number: H01L21/768 ,  H01L21/02068 ,  H01L21/02104 ,  H01L21/30 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/80006

    Abstract: A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, in which the adhesive layer includes an adhesive component and an surfactant component after the disposing, the semiconductor structure includes a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating a first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains on the adhesive layer, in which the carrier substrate, the semiconductor structure, and the bottom electrode have a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.

    METHOD MANUFACTURING LIGHT EMITTING DIODE HAVING SUPPORTING LAY7ER ATTACHED TO TEMPORARY ADHESIVE
    2.
    发明申请
    METHOD MANUFACTURING LIGHT EMITTING DIODE HAVING SUPPORTING LAY7ER ATTACHED TO TEMPORARY ADHESIVE 审中-公开
    方法制造具有支持层间粘附剂的轻微发光二极管

    公开(公告)号：US20170062650A1

    公开(公告)日：2017-03-02

    申请号：US14836974

    申请日：2015-08-27

    Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

    Inventor： Li-Yi CHEN ,  Shih-Chyn LIN ,  Hsin-Wei LEE ,  Pei-Yu CHANG

    IPC: H01L33/00 ,  H01L33/46

    Abstract: A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

    Abstract translation: 一种用于制造至少一个发光二极管（LED）的方法包括在生长衬底上对至少一个发光二极管（LED）结构进行外延; 在所述LED结构上形成至少一个支撑层; 通过粘合剂层将支撑层暂时粘附到载体基底上，其中支撑层的杨氏模量大于粘合剂层的杨氏模量; 并从LED结构去除生长衬底。

    MICRO-LIGHT-EMITTING DIODE
    3.
    发明申请
    MICRO-LIGHT-EMITTING DIODE 有权
    微发光二极管

    公开(公告)号：US20150349205A1

    公开(公告)日：2015-12-03

    申请号：US14718106

    申请日：2015-05-21

    Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

    Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

    IPC: H01L33/38 ,  H01L33/14

    CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/44

    Abstract: A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a first edge isolation structure, a first electrode, and a second electrode. The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.

    Abstract translation: 微发光二极管（micro-LED）包括第一类型半导体层，第二类型半导体层，第一边缘隔离结构，第一电极和第二电极。 第二类型半导体层和第一边缘隔离结构与第一类型半导体层接合。 第一电极与第一类型半导体层电耦合。 第一电极上的第一类型半导体层的边缘的垂直投影的至少一部分与第一电极重叠。 第一边缘隔离结构至少部分地位于第一类型半导体层的一部分上。 第二电极与第二类型半导体层电耦合。

    MICRO-LIGHT-EMITTING DIODE
    4.
    发明申请
    MICRO-LIGHT-EMITTING DIODE 有权
    微发光二极管

    公开(公告)号：US20150349200A1

    公开(公告)日：2015-12-03

    申请号：US14701514

    申请日：2015-04-30

    Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

    Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

    IPC: H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/40

    CPC classification number: H01L33/145 ,  H01L25/0753 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first current controlling layer, a first electrode, and a second electrode. The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.

    Abstract translation: 微发光二极管（micro-LED）包括第一类型半导体层，第二类型半导体，第一电流控制层，第一电极和第二电极。 第二类型半导体层和第一电流控制层与第一类型半导体层接合。 第一电流控制层在其中具有至少一个开口。 第一电极通过开口与第一类型半导体层电耦合。 第二电极与第二类型半导体层电耦合。 第一电极和第二电极中的至少一个具有透光部分。 第一电流控制层在第一电极和第二电极之一上的垂直投影与透光部重叠。 透光部分是透明或半透明的。

    MICRO-LIGHT EMITTING DIODE (MICRO-LED) DEVICE
    6.
    发明申请
    MICRO-LIGHT EMITTING DIODE (MICRO-LED) DEVICE 审中-公开
    微型发光二极管（微型LED）器件

    公开(公告)号：US20170062683A1

    公开(公告)日：2017-03-02

    申请号：US14836976

    申请日：2015-08-27

    Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

    Inventor： Li-Yi CHEN ,  Shih-Chyn LIN ,  Hsin-Wei LEE ,  Pei-Yu CHANG

    IPC: H01L33/62 ,  H01L33/10 ,  H01L33/00 ,  H01L33/14

    CPC classification number: H01L33/405 ,  H01L33/145 ,  H01L2224/19 ,  H01L2224/73267 ,  H01L2224/92244

    Abstract: A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.

    Abstract translation: 微发光二极管（micro-LED）装置包括接收基板和微型LED。 微型LED包括第一类型半导体层，第二类型半导体层，电流控制层，至少一个反射层和至少一个第一电极。 第二类型半导体层与第一类型半导体层接合。 电流控制层与第一类型半导体层和第二类型半导体层之一连接，电流控制层在其中具有至少一个开口。 电反射层与第一类型半导体层耦合。 第一电极设置在面向接收基板的反射层的表面上。 第一电极与接收基板形成粘合粘合系统。

    LIGHT-EMITTING DIODE
    7.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20160064594A1

    公开(公告)日：2016-03-03

    申请号：US14874467

    申请日：2015-10-04

    Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

    Inventor： Li-Yi CHEN ,  Pei-Yu CHANG ,  Chih-Hui CHAN ,  Chun-Yi CHANG ,  Shih-Chyn LIN ,  Hsin-Wei LEE

    IPC: H01L33/00 ,  H01L33/60

    CPC classification number: H01L33/0079 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/025 ,  H01L33/145 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46

    Abstract: A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer.

    Abstract translation: 发光二极管（LED）包括第一类型半导体层，第二类型半导体层，第一电流控制结构和第一电极。 第二类型半导体层与第一类型半导体层接合。 第二类型半导体层具有第一区域和第二区域，其中第一区域具有第一穿透位错密度，第二区域具有第二穿透位错密度，并且第一穿透位错密度大于第二穿透位错密度 。 第一电流控制结构与第一类型半导体层接合并且其中具有至少一个第一电流注入区，其中第一电流控制结构上的第二区的垂直投影至少部分地与第一电流注入 区。 第一电极与第一类型半导体层电耦合。

    LIGHT EMITTING CIRCUIT, DISPLAY DEVICE, AND PIXEL
    8.
    发明申请
    LIGHT EMITTING CIRCUIT, DISPLAY DEVICE, AND PIXEL 审中-公开

    公开(公告)号：US20170358257A1

    公开(公告)日：2017-12-14

    申请号：US15180076

    申请日：2016-06-12

    Applicant: MIKRO MESA TECHNOLOGY CO., LTD.

    Inventor： Shih-Chyn LIN ,  Li-Yi CHEN

    IPC: G09G3/32

    CPC classification number: G09G3/32 ,  G09G2300/0452 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2330/021

    Abstract: A pixel includes a first driving transistor, a first control circuit, a second driving transistor, and a second control circuit. The first driving transistor is configured to drive a first light emitting diode according to a first driving signal and a first supply voltage from a first voltage supply. The first control circuit is configured to generate the first driving signal according to a first data voltage and a scan signal. The second driving transistor is configured to drive a second light emitting diode according to a second driving signal and a second supply voltage from a second voltage supply. The second control circuit is configured to generate the second driving signal according to a second data and the scan signal. The first supply voltage and the second supply voltage are different from each other.

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