公开(公告)号：US20180076166A1

公开(公告)日：2018-03-15

申请号：US15638388

申请日：2017-06-30

Applicant: MEDIATEK INC.

Inventor： Ta-Jen Yu ,  Yu-Sheng Hung ,  Wen-Sung Hsu

IPC: H01L23/00 ,  H01L23/31 ,  H01L25/16 ,  H01L21/56

CPC classification number: H01L24/17 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/04026 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/81

Abstract: A method for fabricating a semiconductor is disclosed. A carrier substrate is provided. A redistribution layer (RDL) structure is formed on the carrier substrate. The RDL structure comprises at least a bump pad. A semiconductor die is mounted on the RDL structure. A molding compound is formed on the semiconductor die and the RDL structure. The carrier substrate is removed to reveal a plurality of solder ball pads of the RDL structure. A plurality of conductive structures are formed on the solder ball pads.

公开(公告)号：US10217716B2

公开(公告)日：2019-02-26

申请号：US15638388

申请日：2017-06-30

Applicant: MEDIATEK INC.

Inventor： Ta-Jen Yu ,  Yu-Sheng Hung ,  Wen-Sung Hsu

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L25/16 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L21/683 ,  H01L25/065 ,  H01L25/10

Abstract: A method for fabricating a semiconductor is disclosed. A carrier substrate is provided. A redistribution layer (RDL) structure is formed on the carrier substrate. The RDL structure comprises at least a bump pad. A semiconductor die is mounted on the RDL structure. A molding compound is formed on the semiconductor die and the RDL structure. The carrier substrate is removed to reveal a plurality of solder ball pads of the RDL structure. A plurality of conductive structures are formed on the solder ball pads.