公开(公告)号：US20180138104A1

公开(公告)日：2018-05-17

申请号：US15800611

申请日：2017-11-01

Applicant: MEDIATEK INC.

Inventor： Hsien-Hsin LIN ,  Ming-Tzong YANG ,  Wen-Kai WAN

IPC: H01L23/367 ,  H01L29/78 ,  H01L23/535 ,  H01L23/528

Abstract: The invention provides a semiconductor device. The semiconductor device includes a gate structure over fin structures arranged in parallel. Each of the fin structures has a drain portion and a source portion on opposite sides of the gate structure. A drain contact structure is positioned over the drain portions of the fin structures. A source contact structure is positioned over the source portions of the fin structures. A first amount of drain via structures is electrically connected to the drain contact structure. A second amount of source via structures is electrically connected to the source contact structure. The sum of the first amount and the second amount is greater than or equal to 2, and the sum of the first amount and the second amount is less than or equal to two times the amount of fin structures.

公开(公告)号：US20230154824A1

公开(公告)日：2023-05-18

申请号：US18155322

申请日：2023-01-17

Applicant: Chee-Wee LIU ,  MEDIATEK INC.

Inventor： Ming-Tzong YANG ,  Hsien-Hsin LIN ,  Wen-Kai WAN ,  Chia-Che CHUNG ,  Chee-Wee LIU

IPC: H01L23/373 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L23/373 ,  H01L21/768 ,  H01L29/785 ,  H01L29/66795 ,  H01L2029/7858

Abstract: A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1and 1200 Wm−1K−1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.