公开(公告)号：US20240071821A1

公开(公告)日：2024-02-29

申请号：US17821479

申请日：2022-08-23

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Dai-Ying LEE ,  Yu-Chao HUANG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266

Abstract: A semiconductor element and a method for manufacturing the same are provided. The semiconductor element includes a plug and a via on the plug and electrically connected to the plug. The plug includes a tungsten plug and a conductive layer on the tungsten plug. The tungsten plug and the conductive layer include different materials. The tungsten plug has a first width in a lateral direction. The conductive layer has a second width in the lateral direction. The second width is greater than or equal to the first width. The conductive layer is between the via and the tungsten plug.