公开(公告)号：US11062759B1

公开(公告)日：2021-07-13

申请号：US16837041

申请日：2020-04-01

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Shaw-Hung Ku ,  Cheng-Hsien Cheng ,  Atsuhiro Suzuki ,  Yu-Hung Huang ,  Sheng-Kai Chen ,  Wen-Jer Tsai

IPC: G11C11/408 ,  G11C11/4074 ,  G11C11/56 ,  G11C11/409 ,  G11C11/4076

Abstract: A memory device and a programming method thereof are provided. The memory device includes a memory array, a plurality of word lines and a voltage generator. During a programming procedure, one of the word lines is at a selected state and others of the word lines are at a deselected state. Some of the word lines, which are at the deselected state, are classified into a first group and a second group. The first group and the second group are respectively located at two sides of the word line, which is at the selected state. The voltage generator provides a programming voltage to the word line, which is at the select state, during a programming duration. The voltage generator provides a first two-stage voltage waveform to the word lines in the first group and provides a second two-stage voltage waveform to the word lines in the second group.