公开(公告)号：US20110259936A1

公开(公告)日：2011-10-27

申请号：US13141821

申请日：2009-12-18

Applicant: Lukas Lichtensteiger

Inventor： Lukas Lichtensteiger

IPC: B26F3/00

CPC classification number: B28D1/221 ,  B81C1/00634 ,  B81C2201/038 ,  H01L21/304 ,  H01L21/76251 ,  Y10T225/10

Abstract: A method of printing comprises the steps of: providing a solid state material having an exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, wherein an exposed surface of the removed layer of solid state material has a surface topology corresponding to the stress pattern.

Abstract translation: 印刷方法包括以下步骤：提供具有暴露表面的固态材料; 将辅助层施加到暴露的表面以形成复合结构，所述辅助层具有应力图案; 使复合结构受到促进固态材料沿着其深度处的平面断裂的条件; 并且除去辅助层，并且随后移除终止于断裂深度处的固态材料层，其中所述去除的固态材料层的暴露表面具有对应于应力图案的表面拓扑。

公开(公告)号：US08877077B2

公开(公告)日：2014-11-04

申请号：US13141821

申请日：2009-12-18

Applicant: Lukas Lichtensteiger

Inventor： Lukas Lichtensteiger

IPC: B44C1/22

CPC classification number: B28D1/221 ,  B81C1/00634 ,  B81C2201/038 ,  H01L21/304 ,  H01L21/76251 ,  Y10T225/10

Abstract: A method of printing comprises the steps of: providing a solid state material having an exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, wherein an exposed surface of the removed layer of solid state material has a surface topology corresponding to the stress pattern.

Abstract translation: 印刷方法包括以下步骤：提供具有暴露表面的固态材料; 将辅助层施加到暴露的表面以形成复合结构，所述辅助层具有应力图案; 使复合结构受到促进固态材料沿着其深度处的平面断裂的条件; 并且除去辅助层，并且随后移除终止于断裂深度处的固态材料层，其中所述去除的固态材料层的暴露表面具有对应于应力图案的表面拓扑。

公开(公告)号：US20100289189A1

公开(公告)日：2010-11-18

申请号：US12740373

申请日：2008-10-24

Applicant: Lukas Lichtensteiger ,  Christian Pfeffer

Inventor： Lukas Lichtensteiger ,  Christian Pfeffer

IPC: B29C39/02 ,  B29C35/08

CPC classification number: H01L21/76251 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: In a method for producing a free-standing solid state layer, a solid state material is provided having at least one surface available for layer formation thereon and a layer of polymer is formed on the available surface. The solid state material and polymer layer are then exposed to a change in local temperature from a first temperature that is no greater than about 300° C. to a second temperature below about room temperature to cause the solid state material to fracture along a plane at a depth in the material, to produce at least one free-standing solid state layer from the solid state material.

Abstract translation: 在制备独立固态层的方法中，提供固态材料，其具有可用于其上形成的至少一个表面，并且在可用表面上形成聚合物层。 然后将固态材料和聚合物层从局部温度的变化从不大于约300℃的第一温度暴露至低于约室温的第二温度，以使固态材料沿着平面在 在材料中的深度，以从固态材料产生至少一个独立的固态层。

公开(公告)号：US08440129B2

公开(公告)日：2013-05-14

申请号：US12740373

申请日：2008-10-24

Applicant: Lukas Lichtensteiger ,  Christian Pfeffer

Inventor： Lukas Lichtensteiger ,  Christian Pfeffer

IPC: B29C67/00

CPC classification number: H01L21/76251 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: In a method for producing a free-standing solid state layer, a solid state material is provided having at least one surface available for layer formation thereon and a layer of polymer is formed on the available surface. The solid state material and polymer layer are then exposed to a change in local temperature from a first temperature that is no greater than about 300° C. to a second temperature below about room temperature to cause the solid state material to fracture along a plane at a depth in the material, to produce at least one free-standing solid state layer from the solid state material.

Abstract translation: 在制备独立固态层的方法中，提供固态材料，其具有可用于其上形成的至少一个表面，并且在可用表面上形成聚合物层。 然后将固态材料和聚合物层从局部温度的变化从不大于约300℃的第一温度暴露至低于约室温的第二温度，以使固态材料沿着平面在 在材料中的深度，以从固态材料产生至少一个独立的固态层。