公开(公告)号：US20130241064A1

公开(公告)日：2013-09-19

申请号：US13420342

申请日：2012-03-14

申请人： Ling Mei LIN ,  Chun Li WU ,  Yung-Fa LEE

发明人： Ling Mei LIN ,  Chun Li WU ,  Yung-Fa LEE

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L24/03 ,  H01L23/522 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05546 ,  H01L2224/05553 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor structure includes a substrate, a bond pad over the substrate, and a passivation layer over the substrate and a peripheral region of the bond pad. The bond pad has a bonding region and the peripheral region surrounding the bonding region. The passivation layer has an opening defined therein, and the opening exposes the bonding region of the bond pad. A first vertical distance between an upper surface of the passivation layer and a surface of the bonding region ranges from 30% to 40% of a second vertical distance between a lower surface of the passivation layer and an upper surface of the peripheral region.

摘要翻译： 半导体结构包括衬底，衬底上的接合焊盘以及衬底上的钝化层和焊盘的外围区域。 接合焊盘具有接合区域和围绕接合区域的周边区域。 钝化层具有限定在其中的开口，并且开口暴露接合焊盘的接合区域。 钝化层的上表面和接合区域的表面之间的第一垂直距离在钝化层的下表面和周边区域的上​​表面之间的第二垂直距离的30％至40％。