公开(公告)号：US5876808A

公开(公告)日：1999-03-02

申请号：US816321

申请日：1997-03-13

Applicant: Lauren A. Hall ,  David J. Devlin ,  David C. Smith

Inventor： Lauren A. Hall ,  David J. Devlin ,  David C. Smith

IPC: C23C16/34 ,  D06M10/02 ,  D06M10/06 ,  D06M10/08 ,  D06M11/58 ,  H05H1/20 ,  H05H1/30

CPC classification number: C23C16/34 ,  D06M10/025 ,  D06M10/06 ,  D06M10/08 ,  D06M11/58

Abstract: A plasma enhanced chemical vapor deposition process for depositing a titanium nitride film on a polymeric substrate is provided, the process including placing the polymeric substrate within a chemical vapor deposition chamber evacuated to a pressure within a range of from about 0.1 Torr to about 10 Torr, heating the polymeric substrate to a temperature within a range of from about 150.degree. C. to about 250.degree. C., introducing a vaporized organometallic compound and ammonia gas into the chamber, generating a plasma within the chamber, and, maintaining the polymeric substrate within the chamber for a time sufficient for a layer of titanium nitride to deposit upon the polymeric substrate.

Abstract translation: 提供了一种用于在聚合物基底上沉积氮化钛膜的等离子体增强化学气相沉积工艺，该方法包括将聚合物基材放置在化学气相沉积室内，抽空至约0.1Torr至约10Torr范围内的压力， 将聚合物基材加热到约150℃至约250℃的温度范围内，将蒸发的有机金属化合物和氨气引入室中，在室内产生等离子体，并将聚合物基材保持在 该室的时间足以使氮化钛层沉积在聚合物基底上。