公开(公告)号：US20240387258A1

公开(公告)日：2024-11-21

申请号：US18785926

申请日：2024-07-26

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Bart J. Van Schravendijk ,  Mark Naoshi Kawaguchi ,  Gereng Gunawan ,  Jay E. Uglow ,  Nagraj Shankar ,  Gowri Channa Kamarthy ,  Kevin M. McLaughlin ,  Ananda K. Banerji ,  Jialing Yang ,  John Hoang ,  Aaron Lynn Routzahn ,  Nathan Musselwhite ,  Meihua Shen ,  Thorsten Bernd Lill ,  Hao Chi ,  Nicholas Dominic Altieri

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L29/788 ,  H10B41/20 ,  H10B41/35

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

公开(公告)号：US12080592B2

公开(公告)日：2024-09-03

申请号：US17250835

申请日：2019-09-10

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Bart J. van Schravendijk ,  Mark Naoshi Kawaguchi ,  Gereng Gunawan ,  Jay E. Uglow ,  Nagraj Shankar ,  Gowri Channa Kamarthy ,  Kevin M. McLaughlin ,  Ananda K. Banerji ,  Jialing Yang ,  John Hoang ,  Aaron Lynn Routzahn ,  Nathan Musselwhite ,  Meihua Shen ,  Thorsten Bernd Lill ,  Hao Chi ,  Nicholas Dominic Altieri

IPC: H01L21/336 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L29/788 ,  H10B41/20 ,  H10B41/35

CPC classification number: H01L21/76846 ,  H01L21/0217 ,  H01L21/02263 ,  H01L21/31105 ,  H01L21/76816 ,  H01L29/7889 ,  H10B41/20 ,  H10B41/35

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.