公开(公告)号：US20250022949A1

公开(公告)日：2025-01-16

申请号：US18238057

申请日：2023-08-25

Applicant: LX Semicon Co., Ltd.

Inventor： Seungwook SONG ,  Namju KANG ,  Jinok PARK ,  Doohyung LEE ,  Chaedeok LEE

IPC: H01L29/78 ,  H01L21/266 ,  H01L29/66 ,  H02M7/537

Abstract: A power semiconductor device includes a substrate, a first conductivity type epitaxial layer disposed on the substrate, a second conductivity type well partially disposed on the first conductivity type epitaxial layer, a second conductivity type ion implantation region partially disposed in the second conductivity type well, a source region partially disposed in the second conductivity type well and disposed on the second conductivity type ion implantation region, a gate insulating layer disposed on the source region and the second conductive type well, a gate disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate, and a source electrode disposed on the source region. The gate insulating layer may include a channel gate insulating layer having a first thickness and a protruding gate insulating layer having a second thickness thicker than the first thickness, A concentration in a Rb region which is a lateral resistance of the second conductivity type ion implantation region may be higher than that of the second conductivity type well.