公开(公告)号：US20240290769A1

公开(公告)日：2024-08-29

申请号：US18584467

申请日：2024-02-22

申请人： LX SEMICON CO., LTD.

发明人： Cheong Sik YU ,  Kee Joon CHOI

IPC分类号： H01L25/18 ,  H01L23/00 ,  H01L23/528

CPC分类号： H01L25/18 ,  H01L23/5283 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/13021 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2924/1426

摘要： Disclosed is a semiconductor device including a low voltage device located on a first substrate and driven with a first level voltage, and a high voltage device located on a second substrate, driven with a second level voltage higher than the first level voltage, and coupled to the low voltage device, wherein the low voltage device includes a FinFET, wherein the high voltage device includes a planar FET.