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公开(公告)号：US11373925B2
公开(公告)日：2022-06-28
申请号：US16477051
申请日：2019-05-07
发明人： Yongjun Huo , Chin Chung Lee
IPC分类号： H01L23/373 , H01L23/367 , H01L21/48 , H01L23/00
摘要： A silver-indium transient liquid phase method of bonding a semiconductor device and a heat-spreading mount, and a semiconductor structure having a silver-indium transient liquid phase bonding joint are provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.
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公开(公告)号：US11894284B2
公开(公告)日：2024-02-06
申请号：US17535145
申请日：2021-11-24
发明人： Yongjun Huo , Chin Chung Lee
IPC分类号： H01L23/367 , H01L23/373 , H01L21/48 , H01L23/00
CPC分类号： H01L23/3735 , H01L21/4871 , H01L23/367 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/2745 , H01L2224/27848 , H01L2224/2908 , H01L2224/29109 , H01L2224/29139 , H01L2224/83825 , H01L2224/83948 , H01L2924/01047 , H01L2924/01049 , H01L2924/01327 , H01L2924/351
摘要： A semiconductor structure having a silver-indium transient liquid phase bonding joint is provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.
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