Display apparatus using semiconductor light-emitting device

    公开(公告)号:US12237359B2

    公开(公告)日:2025-02-25

    申请号:US17257190

    申请日:2018-07-11

    Abstract: Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion. The intermediate layer includes a first layer including second conductive impurities and a second layer having a higher concentration of the second conductive impurities than the first layer, wherein the first layer and the second layer are sequentially and repetitively stacked.

    Display device using semiconductor light emitting device

    公开(公告)号:US10446529B2

    公开(公告)日:2019-10-15

    申请号:US15874720

    申请日:2018-01-18

    Abstract: A semiconductor light emitting device including a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer overlapping the first conductive semiconductor layer, on which the second conductive electrode is disposed; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Further, the second conductive semiconductor layer includes a first layer including a porous material capable of being electro-polished and disposed on an outer surface of the semiconductor light emitting device; a second layer disposed under the first layer and having a lower impurity concentration than the first layer; and a third layer disposed between the second layer and the active layer and having a higher impurity concentration than the second layer.

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