-
公开(公告)号:US09608135B2
公开(公告)日:2017-03-28
申请号:US13644287
申请日:2012-10-04
Applicant: LG ELECTRONICS INC.
Inventor: Youngsung Yang , Yongduk Jin , Manhyo Ha , Juhwa Cheong
IPC: H01L31/0224 , H01L31/068 , H01L31/18
CPC classification number: H01L31/022425 , H01L31/0684 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
Abstract: A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.
-
公开(公告)号:US10903375B2
公开(公告)日:2021-01-26
申请号:US16290233
申请日:2019-03-01
Applicant: LG ELECTRONICS INC.
Inventor: Juhwa Cheong , Yiyin Yu , Youngsung Yang , Yongduk Jin , Manhyo Ha , Seongeun Lee
IPC: H01L31/0216 , H01L31/0224 , H01L31/02
Abstract: A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.
-
3.
公开(公告)号:US09166096B2
公开(公告)日:2015-10-20
申请号:US13840618
申请日:2013-03-15
Applicant: LG ELECTRONICS INC.
Inventor: Juhwa Cheong , Yongduk Jin , Youngsung Yang , Manhyo Ha
IPC: H01L31/18 , H01L31/0216 , H01L31/0224
CPC classification number: H01L31/1864 , H01L31/02168 , H01L31/022441 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.
Abstract translation: 根据本发明实施例的用于制造太阳能电池的掺杂剂层的方法包括:将掺杂剂离子注入基板; 和用于激活掺杂剂的热处理。 在激活的热处理中,在第一气体气氛下,在比第一温度低的温度下形成防扩散膜之后,在第一温度下对基板进行热处理。
-
公开(公告)号:US09768342B2
公开(公告)日:2017-09-19
申请号:US14831615
申请日:2015-08-20
Applicant: LG ELECTRONICS INC.
Inventor: Kyoungsoo Lee , Manhyo Ha
IPC: H01L31/044 , H01L31/18 , H01L31/0236 , H01L31/0216 , H01L31/068
CPC classification number: H01L31/186 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/02366 , H01L31/068 , Y02E10/547
Abstract: A method for manufacturing a solar cell includes forming a first dielectric layer on a second surface opposite a first surface of a substrate; forming second dielectric layers respectively on an emitter region and the first dielectric layer; forming a third dielectric layer on the second dielectric layer that is positioned on the emitter region; forming a hydrogenated silicon oxide layer on the third dielectric layer; forming a first electrode on the emitter region and connected to the emitter region; and forming a second electrode on the second surface of the substrate and connected to the substrate, wherein the first surface of the substrate has first and second textured surfaces, and wherein the first textured surface includes a plurality of first protrusions and a plurality of first depressions and the second textured surface includes a plurality of second protrusions and a plurality of second depressions.
-
公开(公告)号:US09130112B2
公开(公告)日:2015-09-08
申请号:US13840618
申请日:2013-03-15
Applicant: LG ELECTRONICS INC.
Inventor: Juhwa Cheong , Yongduk Jin , Youngsung Yang , Manhyo Ha
IPC: H01L31/18 , H01L31/0216 , H01L31/0224
Abstract: A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.
-
公开(公告)号:US10256353B2
公开(公告)日:2019-04-09
申请号:US15334611
申请日:2016-10-26
Applicant: LG ELECTRONICS INC.
Inventor: Juhwa Cheong , Yiyin Yu , Youngsung Yang , Yongduk Jin , Manhyo Ha , Seongeun Lee
IPC: H01L31/02 , H01L31/0216 , H01L31/0224
Abstract: A solar cell can include a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a back surface field region which is positioned at a back surface opposite the front surface of the substrate; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region including a plurality of layers which are sequentially positioned on the back surface field region; a front electrode part which passes through the front passivation region and is connected to the emitter region, wherein the front electrode part comprises a plurality of front electrodes that are apart from each other and a front bus bar connecting the plurality of front electrodes; a back electrode part which passes through the back passivation region and is connected to the back surface field region, wherein the back electrode part comprises a plurality of back electrodes that are apart from each other and a back bus bar connecting the plurality of back electrodes, wherein the front passivation region includes a first aluminum oxide layer and the back passivation region includes a second aluminum oxide layer.
-
公开(公告)号:US09978888B2
公开(公告)日:2018-05-22
申请号:US15259356
申请日:2016-09-08
Applicant: LG ELECTRONICS INC.
Inventor: Youngsung Yang , Yongduk Jin , Manhyo Ha , Juhwa Cheong
IPC: H01L31/0224 , H01L31/068 , H01L31/18
CPC classification number: H01L31/022425 , H01L31/0684 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
Abstract: A method for manufacturing a solar cell, the method including: preparing a semiconductor substrate; ion-implanting a pre-amorphization element to form an amorphous layer at at least a part of one surface of the semiconductor substrate; ion-implanting a first conductive type dopant to the one surface of the semiconductor substrate to form a first dopant layer; and forming a first electrode electrically connected to the first dopant layer, wherein a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.
-
公开(公告)号:US09755089B2
公开(公告)日:2017-09-05
申请号:US14478841
申请日:2014-09-05
Applicant: LG ELECTRONICS INC.
Inventor: Juhwa Cheong , Sangwook Park , Junyong Ahn , Manhyo Ha
IPC: H01L21/00 , H01L31/0224 , H01L31/0216 , H01L31/02 , H01L31/068
CPC classification number: H01L31/022433 , H01L31/0201 , H01L31/02167 , H01L31/068 , Y02E10/547
Abstract: A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate. The front passivation part and the back passivation part each include a silicon oxide layer. One of the front passivation part and the back passivation part includes an aluminum oxide layer.
-
公开(公告)号:US09559220B2
公开(公告)日:2017-01-31
申请号:US14974407
申请日:2015-12-18
Applicant: LG ELECTRONICS INC.
Inventor: Juhwa Cheong , Yiyin Yu , Youngsung Yang , Yongduk Jin , Manhyo Ha , Seongeun Lee
IPC: H01L31/00 , H01L31/0216 , H01L31/0224 , H01L31/02
CPC classification number: H01L31/02167 , H01L31/02008 , H01L31/022425 , H01L31/022433 , Y02E10/50
Abstract: A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type, a front passivation region including a plurality of layers which are sequentially positioned on the emitter region, a back passivation region which is positioned on a back surface opposite the front surface of the substrate and includes three layers, a plurality of front electrodes which pass through the front passivation region and are connected to the emitter region, and at least one back electrode which passes through the back passivation region and is connected to the substrate.
Abstract translation: 讨论太阳能电池。 太阳能电池包括第一导电类型的衬底,位于衬底的前表面并具有不同于第一导电类型的第二导电类型的发射极区域,包括多个层的前钝化区域,其顺序地 位于发射极区域上的背面钝化区域,其位于与衬底的前表面相对的背面上并且包括三层,多个前电极穿过前钝化区并连接到发射区,以及 至少一个背电极,其穿过背部钝化区域并连接到衬底。
-
-
-
-
-
-
-
-