公开(公告)号：US11997929B2

公开(公告)日：2024-05-28

申请号：US17422321

申请日：2019-06-11

Applicant: LG ELECTRONICS INC.

Inventor： Jongrae Lim ,  Jun Kim ,  Jooyoung Park ,  Jeonghun Son ,  Youngil Jang

IPC: H10N10/852 ,  H10N10/01 ,  H10N10/853 ,  H10N10/857

CPC classification number: H10N10/852 ,  H10N10/01 ,  H10N10/853 ,  H10N10/857

Abstract: The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material capable of improving the figure of merit and a preparation method therefor. In the present invention, the thermoelectric material may comprise: a matrix compound having a composition of chemical formula 1 or 2; and particles having a composition of chemical formula 3 dispersed in the matrix compound. (AB2)x(Bi2Se2.7Te0.3)1-x, (CB)x(Bi2Se2.7Te0.3)1-x, DyEz.

公开(公告)号：US12279528B2

公开(公告)日：2025-04-15

申请号：US17422362

申请日：2019-06-12

Applicant: LG ELECTRONICS INC.

Inventor： Jongrae Lim ,  Jun Kim ,  Jooyoung Park ,  Jeonghun Son ,  Youngil Jang

IPC: H01L35/34 ,  B22F3/105 ,  B22F3/20 ,  B22F9/08 ,  H01L35/26 ,  H10N10/01 ,  H10N10/857 ,  H10N10/852

Abstract: The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material manufacturing method for increasing potential density. The thermoelectric material manufacturing method of the present invention can comprise the steps of: preparing a bulk thermoelectric material by using thermoelectric material raw materials; preparing a powder of the bulk thermoelectric material; adding, to the powder, a metal additive selected from the thermoelectric material raw materials; forming an intermediate in which the metal additive is dispersed in the thermoelectric material; and sintering same at at least the melting point temperature of the metal additive.