公开(公告)号：US20240170246A1

公开(公告)日：2024-05-23

申请号：US17992736

申请日：2022-11-22

Applicant: L3Harris Technologies, Inc.

Inventor： Bed PANTHA ,  Jacob J. BECKER ,  Jon D. BURNSED

IPC: H01J1/34 ,  H01J9/12

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J31/507

Abstract: A photocathode. The photocathode includes an absorber. The absorber a p-type bulk active layer and a plurality of nanostructures formed on the p-type bulk active layer. The Photocathode further includes the plurality of nanostructures, such that the plurality of nanostructures are formed at a band bending region between the bulk active layer and the vacuum.

公开(公告)号：US20240170247A1

公开(公告)日：2024-05-23

申请号：US17992721

申请日：2022-11-22

Applicant: L3Harris Technologies, Inc.

Inventor： Bed PANTHA ,  Jacob J. BECKER ,  Jon D. BURNSED

IPC: H01J29/04 ,  H01J31/50

CPC classification number: H01J29/04 ,  H01J31/50

Abstract: A photocathode epitaxial structure. The photocathode epitaxial structure includes a binary compound substrate material. The photocathode epitaxial structure further includes an active device absorber layer forming a portion of a p-type device photocathode formed on the binary compound substrate material. The active device absorber layer comprising at least a quaternary or greater material structure configured to be lattice matched with the substrate material to reduce strain to allow charge carriers to go further in the active device absorber layer implemented in the photocathode of a nightvision system.

公开(公告)号：US20240145202A1

公开(公告)日：2024-05-02

申请号：US17979639

申请日：2022-11-02

Applicant: L3Harris Technologies, Inc.

Inventor： Bed PANTHA ,  Jacob J. BECKER ,  Jon D. BURNSED

IPC: H01J1/308

CPC classification number: H01J1/308

Abstract: A photocathode epitaxial structure. The photocathode epitaxial structure includes an improved substrate stack. The improved substrate stack includes a GaAs substrate and one or more additional layers formed on the GaAs substrate. The one or more additional layers are configured to provide an improved substrate stack surface with predetermined characteristics for forming a semiconductor device on the improved substrate stack surface. The photocathode epitaxial structure further includes an InGaAs p-type photocathode formed on the improved substrate stack surface. The InGaAs p-type photocathode has a predetermined percentage of In.