公开(公告)号：US20110318855A1

公开(公告)日：2011-12-29

申请号：US13220693

申请日：2011-08-30

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/44

CPC分类号： H01L33/387 ,  H01L33/382 ,  H01L33/44

摘要： A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

摘要翻译： 提供一种制造发光二极管芯片的方法。 首先，在基板上形成半导体器件层。 之后，在半导体器件层的一部分上形成电流扩散层。 然后，在未被电流扩展层覆盖的半导体器件层的一部分上形成电流阻挡层和钝化层。 最后，在电流阻挡层和电流扩展层上形成第一电极。 此外，在半导体器件层上形成第二电极。

公开(公告)号：US20110165705A1

公开(公告)日：2011-07-07

申请号：US13046606

申请日：2011-03-11

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/36

CPC分类号： H01L33/44 ,  H01L33/387 ,  Y10S438/951

摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

摘要翻译： 提供一种制造发光二极管芯片的方法。 在该方法中，应用半色调掩模处理，灰度色调处理或多色调掩模处理，并与剥离处理相结合，以进一步减少发光二极管芯片的处理步骤。 在本发明中，一些部件也可以通过相同的工艺同时形成，以减少发光二极管芯片的工艺步骤。 因此，本发明中提供的发光二极管的制造方法降低了用于制造发光二极管的成本和时间。

公开(公告)号：US20110159614A1

公开(公告)日：2011-06-30

申请号：US13046632

申请日：2011-03-11

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/48

CPC分类号： H01L33/44 ,  H01L33/387 ,  Y10S438/951

摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

公开(公告)号：US08283188B2

公开(公告)日：2012-10-09

申请号：US13220693

申请日：2011-08-30

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L21/00

CPC分类号： H01L33/387 ,  H01L33/382 ,  H01L33/44

摘要： A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

摘要翻译： 提供一种制造发光二极管芯片的方法。 首先，在基板上形成半导体器件层。 之后，在半导体器件层的一部分上形成电流扩散层。 然后，在未被电流扩展层覆盖的半导体器件层的一部分上形成电流阻挡层和钝化层。 最后，在电流阻挡层和电流扩展层上形成第一电极。 此外，在半导体器件层上形成第二电极。

公开(公告)号：US08101440B2

公开(公告)日：2012-01-24

申请号：US13220694

申请日：2011-08-30

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/382 ,  H01L33/44

摘要： A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

公开(公告)号：US08043873B2

公开(公告)日：2011-10-25

申请号：US12398165

申请日：2009-03-04

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/382 ,  H01L33/44

摘要： A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

摘要翻译： 提供一种制造发光二极管芯片的方法。 首先，在基板上形成半导体器件层。 之后，在半导体器件层的一部分上形成电流扩散层。 然后，在未被电流扩展层覆盖的半导体器件层的一部分上形成电流阻挡层和钝化层。 最后，在电流阻挡层和电流扩展层上形成第一电极。 此外，在半导体器件层上形成第二电极。

公开(公告)号：US20110241064A1

公开(公告)日：2011-10-06

申请号：US13159430

申请日：2011-06-14

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/36

CPC分类号： H01L33/145 ,  H01L33/387

摘要： A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

摘要翻译： 提供了包括衬底，半导体器件层，电流阻挡层，电流扩散层，第一电极和第二电极的LED芯片。 半导体器件层设置在基板上。 电流阻挡层设置在半导体器件层的一部分上，并且包括电流阻挡段和电流分布调节段。 电流扩展层设置在半导体器件层的一部分上并覆盖电流阻挡层。 第一电极设置在电流扩展层上，其中电流阻挡段的一部分与第一电极重叠。 当前阻挡段和第一电极的轮廓是相似的图。 第一个电极的等高线并且在当前阻挡段的轮廓内。 电流分布调节段不与第一电极重叠。

公开(公告)号：US20110159623A1

公开(公告)日：2011-06-30

申请号：US13046584

申请日：2011-03-11

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/44

CPC分类号： H01L33/44 ,  H01L33/387 ,  Y10S438/951

摘要： A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

公开(公告)号：US20100012970A1

公开(公告)日：2010-01-21

申请号：US12204815

申请日：2008-09-05

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/38 ,  H01L33/46

摘要： An LED chip includes a substrate, a semiconductor device layer, a wall structure, and a number of electrodes. The semiconductor device layer is disposed on the substrate and includes a first-type doped semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first-type doped semiconductor layer, and a second-type doped semiconductor layer disposed on the active layer and having a first top surface. The wall structure is disposed on the first-type doped semiconductor layer that is not covered by the active layer and surrounds the active layer. Besides, the wall structure has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Additionally, the electrodes are disposed on and electrically connected with the first-type doped semiconductor layer and the second-type doped semiconductor layer.

摘要翻译： LED芯片包括基板，半导体器件层，壁结构和多个电极。 半导体器件层设置在衬底上，并且包括设置在衬底上的第一掺杂半导体层，设置在第一掺杂半导体层的一部分上的有源层和设置在第一掺杂半导体层上的第二掺杂半导体层 活性层并具有第一顶表面。 壁结构设置在第一型掺杂半导体层上，未被有源层覆盖并包围有源层。 此外，壁结构具有比第二类型掺杂半导体层的第一顶表面高的第二顶表面。 此外，电极设置在第一掺杂半导体层和第二掺杂半导体层上并与之电连接。

公开(公告)号：US20110318858A1

公开(公告)日：2011-12-29

申请号：US13220694

申请日：2011-08-30

申请人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

发明人： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

IPC分类号： H01L33/44

CPC分类号： H01L33/387 ,  H01L33/382 ,  H01L33/44

摘要： A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.