发明申请
- 专利标题： METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP
- 专利标题（中）： 用于制造发光二极管芯片的方法
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申请号： US13220693申请日： 2011-08-30
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公开(公告)号： US20110318855A1公开(公告)日： 2011-12-29
- 发明人: Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- 申请人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
- 申请人地址： TW Hsinchu
- 专利权人： LEXTAR ELECTRONICS CORP.
- 当前专利权人： LEXTAR ELECTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 优先权： TW97151136 20081226
- 主分类号： H01L33/44
- IPC分类号： H01L33/44
摘要：
A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
公开/授权文献
- US08283188B2 Method for fabricating light emitting diode chip 公开/授权日：2012-10-09
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