公开(公告)号：US20090145769A1

公开(公告)日：2009-06-11

申请号：US12326659

申请日：2008-12-02

Applicant: Kouichi TSUDA

Inventor： Kouichi TSUDA

IPC: C25D5/44

CPC classification number: C25D11/045 ,  B82Y10/00 ,  C25D11/16 ,  C25D11/18 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11B5/858

Abstract: An alumina nanohole array and a method of fabricating the same includes the steps of forming an aluminum thin-film on a substrate at a substrate temperature of −80° C. or below so that crystal grain growth is suppressed, even when a high-purity aluminum material is used, thus providing improved surface smoothness; and anodizing the aluminum thin-film. Preferably, the method additionally includes texturing by pressing a mold having an orderly array of projections against the aluminum thin-film to form pits on the aluminum thin-film which enables a larger array area to be formed. When the mold and the aluminum thin-film are held at a temperature of 150 to 200° C., the pressure used for pit formation is reduced. A magnetic recording medium manufactured by a method therefore includes forming a magnetic layer within the nanoholes so that the medium is suitable as a bit patterned media for a perpendicular recording system.

Abstract translation: 氧化铝纳米孔阵列及其制造方法包括以下步骤：在-80℃以下的基板温度下在基板上形成铝薄膜，使得晶粒生长被抑制，即使高纯度 使用铝材料，从而提供改善的表面光滑度; 并对铝薄膜进行阳极氧化处理。 优选地，该方法另外包括通过将具有有序排列的突起的模具压靠在铝薄膜上以在铝薄膜上形成凹坑以形成更大阵列区域的方式。 当模具和铝薄膜保持在150至200℃的温度时，用于凹坑形成的压力降低。 因此，通过该方法制造的磁记录介质包括在纳孔内形成磁性层，使得介质适合作为用于垂直记录系统的位图形介质。

公开(公告)号：US20090148723A1

公开(公告)日：2009-06-11

申请号：US12329659

申请日：2008-12-08

Applicant: Kouichi TSUDA

Inventor： Kouichi TSUDA

IPC: G11B5/73 ,  G11B5/62

CPC classification number: G11B5/7315

Abstract: A substrate for a recording medium suited for thermally assisted recording methods has a disc shape with a center hole and includes a silicon single-crystal supporting member; an SiO2 film formed on the silicon single-crystal supporting member; a main face having a film thickness of the SiO2 film thereon which is less than 10 nm; a substrate inner periphery end face adjacent to the center hole; a substrate inner periphery chamfer portion adjacent to the main face and to the substrate inner periphery end face; a substrate outer periphery end face positioned on the side of the main face opposite the substrate inner periphery end face; and a substrate outer periphery chamfer portion adjacent to the main face and to the substrate outer periphery end face. A magnetic recording medium includes at least the above substrate and a magnetic recording layer formed on the substrate.

Abstract translation: 适用于热辅助记录方法的记录介质用基板具有中心孔的圆盘形状，并且包括硅单晶支撑构件; 形成在硅单晶支撑构件上的SiO 2膜; 其上具有小于10nm的SiO 2膜的膜厚度的主面; 与所述中心孔相邻的基板内周端面; 与所述主面相邻的基板内周倒角部和所述基板的内周端面; 位于与所述基板内周端面相对的所述主面侧的基板外周端面; 以及与主面相邻且与基板外周端面相邻的基板外周倒角部。 磁记录介质至少包括上述基板和形成在基板上的磁记录层。

公开(公告)号：US20080213626A1

公开(公告)日：2008-09-04

申请号：US11971373

申请日：2008-01-09

Applicant: Ryoji KOBAYASHI ,  Youichi TEI ,  Kouichi TSUDA

Inventor： Ryoji KOBAYASHI ,  Youichi TEI ,  Kouichi TSUDA

IPC: G11B5/33 ,  B44C1/22

CPC classification number: C03C3/083 ,  C03C15/02 ,  C03C21/002 ,  G11B5/7315 ,  G11B5/8404

Abstract: A method of manufacture of a glass substrate for a magnetic recording medium, which has both high substrate strength and low alkaline elution, includes an etching process of etching the inner-edge face of a donut-shaped glass substrate having an aluminosilicate composition, formed by removing the center portion of a die-molded disc-shaped glass substrate, and an alkali sealing process of performing alkali sealing treatment by proton substitution of alkali ions in the surface layer of the etched donut-shaped glass substrate. The process is used to manufacture a magnetic recording medium incorporating a glass substrate having a total alkaline elution amount of less than 3.1 μg/disk, wherein the magnetic recording medium has a transverse rupture strength greater than 132 N.

Abstract translation: 具有高基板强度和低碱性洗脱性的磁记录介质用玻璃基板的制造方法包括蚀刻具有硅铝酸盐组合物的环状玻璃基板的内缘面的蚀刻工序，该蚀刻工艺由 去除模制的圆盘形玻璃基板的中心部分，以及通过在蚀刻的环形玻璃基板的表面层中碱离子的质子取代进行碱封合处理的碱封闭处理。 该方法用于制造具有总碱性洗脱量小于3.1mug /盘的玻璃基板的磁记录介质，其中磁记录介质具有大于132N的横向断裂强度。