公开(公告)号：US11631757B2

公开(公告)日：2023-04-18

申请号：US16941122

申请日：2020-07-28

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sungjae Cho

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/423

Abstract: The present disclosure relates to a graphene spin transistor for all-electrical operation at room temperature and a logic gate using the graphene Rashba spin transistor. A graphene spin transistor of the present disclosure provides a graphene spin FET (Field Effect Transistor) for all-electrical operation at room temperature without a magnetic field or a ferromagnetic electrode by utilizing the Rashba-Edelstein effect in the graphene or the spin Hall effect of a TMDC (Transition Metal Dichalcogenide) material in order to replace CMOS transistors and extend Moore's Law, and further provides a logic gate using the graphene Rashba spin transistor.

公开(公告)号：US20210020765A1

公开(公告)日：2021-01-21

申请号：US16930422

申请日：2020-07-16

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sungjae Cho

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  H01L29/18

Abstract: Disclosed is a 2D-3D HJ-TFET made of a material, the band gap of which changes according to the thickness, such as black phosphorous or TMDC, in order to extend Moore's law. More particularly, disclosed are the structure of a 2D-3D HJ-TFET and a method for manufacturing the same, wherein the 2D-3D HJ-TFET is made of a material such as black phosphorous or TMDC such that the same consumes less power, has a high switching speed, can operate in a complementary manner so as to replace a conventional CMOS transistor, and can extend Moore's law.

公开(公告)号：US11121243B2

公开(公告)日：2021-09-14

申请号：US16930422

申请日：2020-07-16

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sungjae Cho

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  H01L29/18

Abstract: Disclosed is a 2D-3D HJ-TFET made of a material, the band gap of which changes according to the thickness, such as black phosphorous or TMDC, in order to extend Moore's law. More particularly, disclosed are the structure of a 2D-3D HJ-TFET and a method for manufacturing the same, wherein the 2D-3D HJ-TFET is made of a material such as black phosphorous or TMDC such that the same consumes less power, has a high switching speed, can operate in a complementary manner so as to replace a conventional CMOS transistor, and can extend Moore's law.

公开(公告)号：US20210036133A1

公开(公告)日：2021-02-04

申请号：US16941122

申请日：2020-07-28

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sungjae Cho

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/423

Abstract: The present disclosure relates to a graphene spin transistor for all-electrical operation at room temperature and a logic gate using the graphene Rashba spin transistor. A graphene spin transistor of the present disclosure provides a graphene spin FET (Field Effect Transistor) for all-electrical operation at room temperature without a magnetic field or a ferromagnetic electrode by utilizing the Rashba-Edelstein effect in the graphene or the spin Hall effect of a TMDC (Transition Metal Dichalcogenide) material in order to replace CMOS transistors and extend Moore's Law, and further provides a logic gate using the graphene Rashba spin transistor.