公开(公告)号：US20210296337A1

公开(公告)日：2021-09-23

申请号：US17016909

申请日：2020-09-10

申请人： Kioxia Corporation

发明人： Daisuke HAGISHIMA ,  Fumitaka ARAI ,  Keiji HOSOTANI ,  Masaki KONDO

IPC分类号： H01L27/11556 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11519

摘要： According to one embodiment, a semiconductor memory device includes first and second semiconductor layers and a first conductive layer. The first and second semiconductor layers extend in a first direction. The second semiconductor layer is stacked above the first semiconductor layer in a second direction intersecting the first direction. The first conductive layer intersects the first and second semiconductor layers and extends in the second direction. The first conductive layer includes first and second portions intersecting the first and second semiconductor layers respectively. A width of the first portion in the first direction is smaller than a width of the second portion in the first direction. A thickness of the first semiconductor layer in the second direction is larger than a thickness of the second semiconductor layer in the second direction.

公开(公告)号：US20210296347A1

公开(公告)日：2021-09-23

申请号：US17017385

申请日：2020-09-10

申请人： Kioxia Corporation

发明人： Yuta SAITO ,  Shinji MORI ,  Keiji HOSOTANI ,  Daisuke HAGISHIMA ,  Atsushi TAKAHASHI

IPC分类号： H01L27/11578 ,  H01L27/11565 ,  H01L27/11568

摘要： According to one embodiment, a semiconductor memory device includes: a first semiconductor layer; first and second insulating layers in contact with the first semiconductor layer; a second semiconductor layer in contact with the first insulating layer; a third semiconductor layer in contact with the second insulating layer; a first conductor; a third insulating layer in contact with the first conductor; a fourth insulating layer provided between the second semiconductor layer and the third insulating layer; a first charge storage layer provided between the second semiconductor layer and the fourth insulating layer; and a fifth insulating layer provided between the second semiconductor layer and the first charge storage layer. The second semiconductor layer, the first conductor, the third to fifth insulating layers, and the first charge storage layer function as a first memory cell.

公开(公告)号：US20230309304A1

公开(公告)日：2023-09-28

申请号：US17930236

申请日：2022-09-07

申请人： KIOXIA CORPORATION

发明人： Masahiro KOIKE ,  Daisuke HAGISHIMA

IPC分类号： H01L27/11582 ,  H01L27/11556

CPC分类号： H01L27/11582 ,  H01L27/11556

摘要： A semiconductor memory device includes conductive layers, a semiconductor layer opposed to the conductive layers, and a gate insulating film disposed therebetween. When positions corresponding to surfaces on one and the other sides of the first conductive layer and an intermediate position thereof are respectively assumed to be a first position to a third position, when positions corresponding to surfaces on one and the other sides of the second conductive layer and an intermediate position thereof are respectively assumed to be a fourth position to a sixth position, and when lengths of the semiconductor layer at the first position to the sixth position are respectively assumed to be a first length to a sixth length, the first length to the third length are smaller than the fourth length to the sixth length, and the third length is smaller than the first length and the second length.