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    RESISTANCE CHANGE DEVICE AND STORAGE DEVICE
    3.
    发明申请
    RESISTANCE CHANGE DEVICE AND STORAGE DEVICE 有权

    公开(公告)号：US20230085635A1

    公开(公告)日：2023-03-23

    申请号：US17687944

    申请日：2022-03-07

    申请人： Kioxia Corporation

    发明人： Hiroki KAWAI ,  Kasumi YASUDA ,  Hiroki TOKUHIRA ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU

    IPC分类号： H01L45/00 ,  G11C13/00

    摘要： A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20220262954A1

    公开(公告)日：2022-08-18

    申请号：US17734960

    申请日：2022-05-02

    申请人： Kioxia Corporation

    发明人： Tomoki ISHIMARU ,  Shinji MORI ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Akifumi GAWASE

    IPC分类号： H01L29/786 ,  H01L27/108 ,  H01L29/267 ,  H01L29/08 ,  H01L29/417 ,  H01L29/40

    摘要： A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    5.
    发明公开
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20240324178A1

    公开(公告)日：2024-09-26

    申请号：US18593978

    申请日：2024-03-04

    申请人： Kioxia Corporation

    发明人： Kasumi OKABE ,  Akifumi GAWASE ,  Kazuhiro KATONO ,  Kotaro NODA ,  Takanori AKITA ,  Takahiro FUJII

    IPC分类号： H10B12/00

    CPC分类号： H10B12/33 ,  H10B12/50

    摘要： A semiconductor device includes a first electrode, an oxide semiconductor layer electrically connected to the first electrode and disposed above the first electrode, a gate electrode facing the oxide semiconductor layer with an insulating film interposed therebetween, and a second electrode including a first conductive layer electrically connected to the oxide semiconductor layer and disposed above the oxide semiconductor layer, the first conductive layer containing oxygen, indium, and tin. The second electrode further includes a second conductive layer in contact with the first conductive layer and containing oxygen and a first metal and a third conductive layer in contact with the second conductive layer and containing the first metal.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20230307358A1

    公开(公告)日：2023-09-28

    申请号：US17942005

    申请日：2022-09-09

    申请人： Kioxia Corporation

    发明人： Akifumi GAWASE ,  Yimin LIU

    IPC分类号： H01L23/528 ,  H01L21/768

    CPC分类号： H01L23/528 ,  H01L21/76802 ,  H01L21/76877

    摘要： A semiconductor device includes first conductive layers, a width in a first direction thereof being a first width, a second conductive layer arranged with first conductive layers, a smaller one of a width in the first direction thereof and a width in a second direction thereof being a second width that is larger than the first width, a third conductive layer in contact with one end portion of at least one of first conductive layers, and a fourth conductive layer in contact with one end portion of the second conductive layer. The at least one of first conductive layers and the second conductive layer contain a first metal, a second metal, and oxygen (O). A concentration of the first metal of the at least one of first conductive layers is higher than a concentration of the first metal of the second conductive layer.

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210082711A1

    公开(公告)日：2021-03-18

    申请号：US16820888

    申请日：2020-03-17

    申请人： Kioxia Corporation

    发明人： Akifumi GAWASE ,  Yukiteru MATSUI ,  Mikiya SAKASHITA

    IPC分类号： H01L21/3105 ,  H01L21/033 ,  H01L21/311

    摘要： A method for manufacturing a semiconductor device according to an embodiment includes: forming a first layer on a semiconductor substrate, a surface of the first layer having a first plane of which distance from the semiconductor substrate is a first distance and a second plane of which distance from the semiconductor substrate is a second distance smaller than the first distance, and a difference between the first distance and the second distance being 30 nm or more; performing planarization processing on the first layer to have the difference of less than 30 nm; forming a second layer directly on the first layer after performing the planarization processing; supplying a resist to the second layer; bringing a template having a pattern into contact with the resist to form a resist layer to which the pattern has been transferred; and etching the second layer using the resist layer as a mask.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    9.
    发明公开
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20230413530A1

    公开(公告)日：2023-12-21

    申请号：US18178474

    申请日：2023-03-03

    申请人： Kioxia Corporation

    发明人： Akifumi GAWASE ,  Shuntaro YAMASHITA

    IPC分类号： H10B12/00

    CPC分类号： H10B12/33 ,  H10B12/05

    摘要： According to one embodiment, a semiconductor device includes first and second electrodes comprising a metal oxide an oxide semiconductor layer between the first and second electrodes, a gate electrode surrounding the oxide semiconductor layer, a gate insulating layer, a first insulating layer between the first and gate electrodes, a second insulating layer between the second and gate electrodes, a first conductive layer contacting the surface of the first electrode, a second conductive layer contacting the surface of second electrode, a first layer surrounding the first electrode, a second layer surrounding the second electrode, a third insulating layer between the first electrode and the first insulating layer and contacting the gate insulating layer and the first layer, and a fourth insulating layer between the second electrode and the second insulating layer and contacting the gate insulating layer and the second layer.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20230030121A1

    公开(公告)日：2023-02-02

    申请号：US17964375

    申请日：2022-10-12

    申请人： Kioxia Corporation

    发明人： Akifumi GAWASE ,  Atsuko SAKATA

    IPC分类号： H01L29/786 ,  H01L27/108 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24

    摘要： Provided is a semiconductor device of the embodiment including: an oxide semiconductor layer; a gate electrode; a first electrode electrically connected to one portion of the oxide semiconductor layer, the first electrode including a first region, second region, a third region, and a fourth region, the first region disposed between the first portion and the second region, the first region disposed between the third region and the fourth region, the first region containing at least one element of In, Zn, Sn or Cd, and oxygen, the second region containing at least one metal element of Ti, Ta, W, or Ru, the third region and the fourth region containing the at least one metal element and oxygen, the third region and the fourth region having an atomic concentration of oxygen higher than that of the second region; and a second electrode electrically connected to another portion of the oxide semiconductor layer.