METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20210082711A1

    公开(公告)日:2021-03-18

    申请号:US16820888

    申请日:2020-03-17

    摘要: A method for manufacturing a semiconductor device according to an embodiment includes: forming a first layer on a semiconductor substrate, a surface of the first layer having a first plane of which distance from the semiconductor substrate is a first distance and a second plane of which distance from the semiconductor substrate is a second distance smaller than the first distance, and a difference between the first distance and the second distance being 30 nm or more; performing planarization processing on the first layer to have the difference of less than 30 nm; forming a second layer directly on the first layer after performing the planarization processing; supplying a resist to the second layer; bringing a template having a pattern into contact with the resist to form a resist layer to which the pattern has been transferred; and etching the second layer using the resist layer as a mask.