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    System and method for forming moveable features on a composite substrate
    2.
    发明授权
    System and method for forming moveable features on a composite substrate 有权
    用于在复合基底上形成可移动特征的系统和方法

    公开(公告)号：US07785913B2

    公开(公告)日：2010-08-31

    申请号：US11359558

    申请日：2006-02-23

    Applicant: John S. Foster ,  Paul J. Rubel ,  Kimon Rybnicek ,  Paulo Silveira da Motta

    Inventor： John S. Foster ,  Paul J. Rubel ,  Kimon Rybnicek ,  Paulo Silveira da Motta

    IPC: H01L21/00

    CPC classification number: B81C1/00936 ,  B81C2201/0132

    Abstract: A method for forming moveable features suspended over a substrate is described, wherein a cavity beneath the moveable feature is first formed using a liquid etchant applied through one or more release holes. After formation of the cavity, the outline of the moveable feature is formed using a dry etch process. Since the moveable feature is free to move upon its formation using the dry etch process, no stiction issues arise using the systems and methods described here.

    Abstract translation: 描述了一种用于形成悬挂在衬底上的可移动特征的方法，其中首先使用通过一个或多个释放孔施加的液体蚀刻剂形成可移动特征之下的空腔。 在形成空腔之后，使用干蚀刻工艺形成可移动特征的轮廓。 由于可移动特征在使用干蚀刻工艺形成时可以自由移动，所以不使用本文所述的系统和方法产生静电问题。

    Interconnect structure using through wafer vias and method of fabrication
    3.
    发明申请
    Interconnect structure using through wafer vias and method of fabrication 有权
    通过晶片通孔和制造方法的互连结构

    公开(公告)号：US20080079120A1

    公开(公告)日：2008-04-03

    申请号：US11541774

    申请日：2006-10-03

    Applicant: John S. Foster ,  Steven H. Hovey ,  Paul J. Rubel ,  Kimon Rybnicek

    Inventor： John S. Foster ,  Steven H. Hovey ,  Paul J. Rubel ,  Kimon Rybnicek

    IPC: H01L29/06 ,  H01L21/30

    CPC classification number: B81B7/007 ,  B81B2201/014 ,  B81B2207/092

    Abstract: A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.

    Abstract translation: 描述了一种在空腔内气密地密封至少一个微结构的装置和方法。 通过通过在其前侧支撑至少一个微结构的通孔基板形成的通过晶片通孔提供对至少一个微结构的电接入。 通孔基板和盖子晶片可以形成封闭至少一个微结构的密封腔。 贯通晶片通孔通过形成在通孔基板的背面上的互连结构连接到位于空腔外部的接合焊盘。 因为它们在空腔外部，所以接合焊盘可以放置在形成空腔的接合线的周边内部，从而大大减小了器件所占据的面积。 贯通晶片通孔也缩短了微结构与互连之间的电路长度，从而改善了器件中的传热和信号损失。

    MEMS device trench plating process and apparatus for through hole vias
    4.
    发明授权
    MEMS device trench plating process and apparatus for through hole vias 有权
    MEMS器件沟槽电镀工艺和通孔通孔设备

    公开(公告)号：US07233048B2

    公开(公告)日：2007-06-19

    申请号：US11211624

    申请日：2005-08-26

    Applicant: Kimon Rybnicek

    Inventor： Kimon Rybnicek

    IPC: H01L27/00 ,  H01L21/00

    CPC classification number: B81C1/00301 ,  B81B2207/096 ,  H01L21/76879 ,  H01L21/76898

    Abstract: A method for forming through hole vias in a substrate uses a partially exposed seed layer to plate the bottom of a blind trench formed in the front side of a substrate. Thereafter, the plating proceeds substantially uniformly from the bottom of the blind hole to the top. To form the through hole, the rear face of the substrate is ground or etched away to remove material up to and including the dead-end wall of the blind hole.

    Abstract translation: 用于在衬底中形成通孔的方法使用部分暴露的种子层来平坦化形成在衬底前侧的盲沟的底部。 此后，电镀从盲孔的底部到顶部基本均匀地进行。 为了形成通孔，将基板的后表面研磨或蚀刻掉以去除直到并包括盲孔的死端壁的材料。

    MEMS plate switch and method of manufacture
    6.
    发明授权
    MEMS plate switch and method of manufacture 有权
    MEMS板式开关及其制造方法

    公开(公告)号：US07864006B2

    公开(公告)日：2011-01-04

    申请号：US12068586

    申请日：2008-02-08

    Applicant: John S. Foster ,  Paulo Silveira da Motta ,  Alok Paranjpye ,  Kimon Rybnicek

    Inventor： John S. Foster ,  Paulo Silveira da Motta ,  Alok Paranjpye ,  Kimon Rybnicek

    IPC: H01H51/22

    CPC classification number: H01H59/0009 ,  H01H1/18

    Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have a flexible shunt bar which has one end coupled to the deformable plate, and the other end coupled to a contact on the second substrate. Upon activating the switch, the deformable plate urges the shunt bar against a second contact formed in the second substrate, thereby closing the switch. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.

    Abstract translation: 用于形成静电MEMS板开关的系统和方法包括在第一衬底上形成可变形板，在第二衬底上形成电触点，并使用气密密封来连接两个衬底。 可变形板可以具有柔性分流杆，其具有联接到可变形板的一端，而另一端联接到第二基板上的接触件。 在启动开关时，可变形板将分流杆推动抵靠形成在第二基板中的第二触点，由此闭合开关。 气密密封可以是金/铟合金，通过加热镀在一层金上的铟层而形成。 可以通过形成穿过第二基板的厚度的通孔来进行对静电MEMS开关的电接入。

    Interconnect structure using through wafer vias and method of fabrication
    7.
    发明授权
    Interconnect structure using through wafer vias and method of fabrication 有权
    通过晶片通孔和制造方法的互连结构

    公开(公告)号：US07675162B2

    公开(公告)日：2010-03-09

    申请号：US11541774

    申请日：2006-10-03

    Applicant: John S. Foster ,  Steven H. Hovey ,  Paul J. Rubel ,  Kimon Rybnicek

    Inventor： John S. Foster ,  Steven H. Hovey ,  Paul J. Rubel ,  Kimon Rybnicek

    IPC: H01L23/10

    CPC classification number: B81B7/007 ,  B81B2201/014 ,  B81B2207/092

    Abstract: A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.

    Abstract translation: 描述了一种在空腔内气密地密封至少一个微结构的装置和方法。 通过通过在其前侧支撑至少一个微结构的通孔基板形成的通过晶片通孔提供对至少一个微结构的电接触。 通孔基板和盖子晶片可以形成封闭至少一个微结构的密封腔。 贯通晶片通孔通过形成在通孔基板的背面上的互连结构连接到位于空腔外部的接合焊盘。 因为它们在空腔外部，所以接合焊盘可以放置在形成空腔的接合线的周边内部，从而大大减小了器件所占据的面积。 贯通晶片通孔也缩短了微结构与互连之间的电路长度，从而改善了器件中的传热和信号损失。

    MEMS plate switch and method of manufacture
    9.
    发明申请
    MEMS plate switch and method of manufacture 有权
    MEMS板式开关及其制造方法

    公开(公告)号：US20080277258A1

    公开(公告)日：2008-11-13

    申请号：US12068586

    申请日：2008-02-08

    Applicant: John S. Foster ,  Alok Paranjpye ,  Kimon Rybnicek ,  Paulo Silveira da Motta

    Inventor： John S. Foster ,  Alok Paranjpye ,  Kimon Rybnicek ,  Paulo Silveira da Motta

    IPC: H01H1/10

    CPC classification number: H01H59/0009 ,  H01H1/18

    Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have a flexible shunt bar which has one end coupled to the deformable plate, and the other end coupled to a contact on the second substrate. Upon activating the switch, the deformable plate urges the shunt bar against a second contact formed in the second substrate, thereby closing the switch. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.

    Abstract translation: 用于形成静电MEMS板开关的系统和方法包括在第一衬底上形成可变形板，在第二衬底上形成电触点，并使用气密密封来连接两个衬底。 可变形板可以具有柔性分流杆，其具有联接到可变形板的一端，而另一端联接到第二基板上的接触件。 在启动开关时，可变形板将分流杆推动抵靠形成在第二基板中的第二触点，由此闭合开关。 气密密封可以是金/铟合金，通过加热镀在一层金上的铟层而形成。 可以通过形成穿过第二基板的厚度的通孔来进行对静电MEMS开关的电接入。

    System and method for forming moveable features on a composite substrate
    10.
    发明申请
    System and method for forming moveable features on a composite substrate 有权
    用于在复合基底上形成可移动特征的系统和方法

    公开(公告)号：US20070196998A1

    公开(公告)日：2007-08-23

    申请号：US11359558

    申请日：2006-02-23

    Applicant: John Foster ,  Paul Rubel ,  Kimon Rybnicek ,  Paulo Motta

    Inventor： John Foster ,  Paul Rubel ,  Kimon Rybnicek ,  Paulo Motta

    IPC: H01L21/30 ,  H01L21/46

    CPC classification number: B81C1/00936 ,  B81C2201/0132

    Abstract: A method for forming moveable features suspended over a substrate is described, wherein a cavity beneath the moveable feature is first formed using a liquid etchant applied through one or more release holes. After formation of the cavity, the outline of the moveable feature is formed using a dry etch process. Since the moveable feature is free to move upon its formation using the dry etch process, no stiction issues arise using the systems and methods described here.

    Abstract translation: 描述了一种用于形成悬挂在衬底上的可移动特征的方法，其中首先使用通过一个或多个释放孔施加的液体蚀刻剂形成可移动特征之下的空腔。 在形成空腔之后，使用干蚀刻工艺形成可移动特征的轮廓。 由于可移动特征在使用干蚀刻工艺形成时可以自由移动，所以不使用本文所述的系统和方法产生静电问题。

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