Via First Plus Via Last Technique for IC Interconnect
    1.
    发明申请
    Via First Plus Via Last Technique for IC Interconnect 有权
    Via First Plus通过IC互连的最后技术

    公开(公告)号:US20100261310A1

    公开(公告)日:2010-10-14

    申请号:US12822000

    申请日:2010-06-23

    IPC分类号: H01L21/50 H01L21/768

    摘要: A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. The first set of vias are produced prior to circuitry on the die, and the second set of vias are produced after circuitry on the die. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.

    摘要翻译: 多层IC器件包含第一裸片,其包括具有第一组和第二组通孔的衬底。 第一组通孔从衬底的一侧延伸,并且第二组通孔从衬底的相对侧延伸。 两组通孔耦合在一起。 第一组通孔在物理上小于第二组通孔。 第一组通孔在芯片上的电路之前产生,并且第二组通孔在芯片上的电路之后产生。 具有一组互连件的第二管芯相对于第一管芯堆叠,其中互连件耦合到第一组通孔。

    IC Interconnect
    2.
    发明申请
    IC Interconnect 有权
    IC互连

    公开(公告)号:US20110042829A1

    公开(公告)日:2011-02-24

    申请号:US12938396

    申请日:2010-11-03

    IPC分类号: H01L23/538

    摘要: A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.

    摘要翻译: 多层IC器件包含第一裸片,其包括具有第一组和第二组通孔的衬底。 第一组通孔从衬底的一侧延伸,并且第二组通孔从衬底的相对侧延伸。 两组通孔耦合在一起。 第一组通孔在物理上小于第二组通孔。 具有一组互连件的第二管芯相对于第一管芯堆叠,其中互连件耦合到第一组通孔。

    Via first plus via last technique for IC interconnects
    3.
    发明授权
    Via first plus via last technique for IC interconnects 有权
    通过第一个加上通过IC互连的最后技术

    公开(公告)号:US07939926B2

    公开(公告)日:2011-05-10

    申请号:US12334433

    申请日:2008-12-12

    IPC分类号: H01L23/02

    摘要: A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. The first set of vias are produced prior to circuitry on the die, and the second set of vias are produced after circuitry on the die. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.

    摘要翻译: 多层IC器件包含第一裸片,其包括具有第一组和第二组通孔的衬底。 第一组通孔从衬底的一侧延伸,并且第二组通孔从衬底的相对侧延伸。 两组通孔耦合在一起。 第一组通孔在物理上小于第二组通孔。 第一组通孔在芯片上的电路之前产生,并且第二组通孔在芯片上的电路之后产生。 具有一组互连件的第二管芯相对于第一管芯堆叠,其中互连件耦合到第一组通孔。

    IC interconnect
    4.
    发明授权
    IC interconnect 有权
    IC互连

    公开(公告)号:US08076768B2

    公开(公告)日:2011-12-13

    申请号:US12938396

    申请日:2010-11-03

    IPC分类号: H01L23/02

    摘要: A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.

    摘要翻译: 多层IC器件包含第一裸片,其包括具有第一组和第二组通孔的衬底。 第一组通孔从衬底的一侧延伸,并且第二组通孔从衬底的相对侧延伸。 两组通孔耦合在一起。 第一组通孔在物理上小于第二组通孔。 具有一组互连件的第二管芯相对于第一管芯堆叠,其中互连件耦合到第一组通孔。

    Method of fabricating via first plus via last IC interconnect
    5.
    发明授权
    Method of fabricating via first plus via last IC interconnect 有权
    通过第一加上通过最后IC互连制造的方法

    公开(公告)号:US07985620B2

    公开(公告)日:2011-07-26

    申请号:US12822000

    申请日:2010-06-23

    IPC分类号: H01L21/00 H01L23/34

    摘要: A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. The first set of vias are produced prior to circuitry on the die, and the second set of vias are produced after circuitry on the die. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.

    摘要翻译: 多层IC器件包含第一裸片,其包括具有第一组和第二组通孔的衬底。 第一组通孔从衬底的一侧延伸,并且第二组通孔从衬底的相对侧延伸。 两组通孔耦合在一起。 第一组通孔在物理上小于第二组通孔。 第一组通孔在芯片上的电路之前产生,并且第二组通孔在芯片上的电路之后产生。 具有一组互连件的第二管芯相对于第一管芯堆叠,其中互连件耦合到第一组通孔。

    Via First Plus Via Last Technique for IC Interconnects
    6.
    发明申请
    Via First Plus Via Last Technique for IC Interconnects 有权
    Via First Plus通过IC互连的最后技术

    公开(公告)号:US20100148371A1

    公开(公告)日:2010-06-17

    申请号:US12334433

    申请日:2008-12-12

    IPC分类号: H01L21/50 H01L23/538

    摘要: A multi-tiered IC device contains a first die including a substrate with a first and second set of vias. The first set of vias extends from one side of the substrate, and the second set of vias extend from an opposite side of the substrate. Both sets of vias are coupled together. The first set of vias are physically smaller than the second set of vias. The first set of vias are produced prior to circuitry on the die, and the second set of vias are produced after circuitry on the die. A second die having a set of interconnects is stacked relative to the first die in which the interconnects couple to the first set of vias.

    摘要翻译: 多层IC器件包含第一裸片,其包括具有第一组和第二组通孔的衬底。 第一组通孔从衬底的一侧延伸,并且第二组通孔从衬底的相对侧延伸。 两组通孔耦合在一起。 第一组通孔在物理上小于第二组通孔。 第一组通孔在芯片上的电路之前产生,并且第二组通孔在芯片上的电路之后产生。 具有一组互连件的第二管芯相对于第一管芯堆叠,其中互连件耦合到第一组通孔。

    METHOD FOR BONDING A DIE OR SUBSTRATE TO A CARRIER
    7.
    发明申请
    METHOD FOR BONDING A DIE OR SUBSTRATE TO A CARRIER 有权
    将一个或多个基板接合到载体上的方法

    公开(公告)号:US20080166525A1

    公开(公告)日:2008-07-10

    申请号:US11963487

    申请日:2007-12-21

    摘要: A method is disclosed for bonding two elements by means of a bonding agent such as a glue layer, wherein the bonding agent is removable, and wherein between the bonding agent and at least one element, a sacrificial layer is applied which is selectively removable with respect to that element. According to embodiments, the elements comprise a die or a substrate bonded to a carrier wafer. The nature and type of the die or substrate and of the carrier can vary within the scope of embodiments of the invention. Also disclosed is a composite substrate obtainable by methods of the invention.

    摘要翻译: 公开了一种通过诸如胶层之类的粘结剂粘接两个元件的方法,其中粘合剂是可去除的,并且其中在粘合剂和至少一个元件之间施加牺牲层,该牺牲层可相对于 到那个元素 根据实施例,元件包括结合到载体晶片的管芯或衬底。 模具或基底和载体的性质和类型可以在本发明的实施例的范围内变化。 还公开了可通过本发明的方法获得的复合基材。

    Method for chip singulation
    8.
    发明申请

    公开(公告)号:US20060068567A1

    公开(公告)日:2006-03-30

    申请号:US11234835

    申请日:2005-09-23

    IPC分类号: H01L21/78

    CPC分类号: H01L21/78 H01L21/3043

    摘要: The present invention is related to a method for singulating chips from a stack of layers, such as the layers on a wafer or substrate. The stack of layers includes a front end of line (FEOL) layer upon the substrate layer, with the substrate layer having a first surface and a second surface. The FEOL is positioned on top of the first surface, and a back end of line (BEOL) layer is positioned on top of the FEOL. The method includes etching singulating trenches through the BEOL, through the FEOL and at least partially through the substrate layer, depositing a passivation layer on the stack provided with singulating trenches, whereby the sidewalls of the etched singulating trenches are at least partially passivated. Dicing, such as blade dicing, laser dicing or trench etch dicing is performed, releasing the chip from the stack of layers.

    ALIGNMENT STRATEGY OPTIMIZATION METHOD
    9.
    发明申请
    ALIGNMENT STRATEGY OPTIMIZATION METHOD 有权
    对齐策略优化方法

    公开(公告)号:US20060103822A1

    公开(公告)日:2006-05-18

    申请号:US10990335

    申请日:2004-11-17

    IPC分类号: G03B27/52

    CPC分类号: G03F7/70633 G03F9/7046

    摘要: The invention relates to a method of optimizing an alignment strategy for processing batches of substrates in a lithographic projection apparatus. First, all substrates in a plurality of batches of substrates in the lithographic projection apparatus are sequentially aligned and exposed using a predefined alignment strategy. Then, alignment data is determined for each substrate in the plurality of batches of substrates. Next, at least one substrate in each batch of substrates is selected to render a set of selected substrates comprising at least one substrate in each batch. In a metrology tool, overlay data for each of the selected substrates is determined. Then, overlay indicator values for a predefined overlay indicator are calculated for the predefined alignment strategy and for other possible alignment strategies. In this calculation, the alignment data and the overlay data of the selected substrates is used. Finally, an optimal alignment strategy is determined, the strategy being defined as alignment strategy among the predefined alignment strategy and the other possible alignment strategies with a lowest overlay indicator value.

    摘要翻译: 本发明涉及一种优化用于在光刻投影设备中处理批次的基板的对准策略的方法。 首先,光刻投影设备中的多批基板中的所有基板使用预定义的对准策略顺序对准和曝光。 然后,确定多批基板中的每个基板的对准数据。 接下来,选择每批衬底中的至少一个衬底,以在每批中提供包含至少一个衬底的一组选定衬底。 在计量工具中,确定每个所选择的基底的覆盖数据。 然后,为预定义的对齐策略和其他可能的对准策略计算预定义重叠指示符的覆盖指示符值。 在该计算中,使用所选择的基板的对准数据和覆盖数据。 最后,确定最佳对准策略,该策略被定义为预定义对准策略中的对准策略和具有最低覆盖指标值的其他可能的对准策略。

    Alignment strategy optimization method
    10.
    发明授权
    Alignment strategy optimization method 有权
    对齐策略优化方法

    公开(公告)号:US07042552B1

    公开(公告)日:2006-05-09

    申请号:US10990335

    申请日:2004-11-17

    IPC分类号: G03B27/52 G03B27/42

    CPC分类号: G03F7/70633 G03F9/7046

    摘要: The invention relates to a method of optimizing an alignment strategy for processing batches of substrates in a lithographic projection apparatus. First, all substrates in a plurality of batches of substrates in the lithographic projection apparatus are sequentially aligned and exposed using a predefined alignment strategy. Then, alignment data is determined for each substrate in the plurality of batches of substrates. Next, at least one substrate in each batch of substrates is selected to render a set of selected substrates including at least one substrate in each batch. In a metrology tool, overlay data for each of the selected substrates is determined. Then, overlay indicator values for a predefined overlay indicator are calculated for the predefined alignment strategy and for other possible alignment strategies. In this calculation, the alignment data and the overlay data of the selected substrates is used. Finally, an optimal alignment strategy is determined, the strategy being defined as alignment strategy among the predefined alignment strategy and the other possible alignment strategies with a lowest overlay indicator value.

    摘要翻译: 本发明涉及一种优化用于在光刻投影设备中处理批次的基板的对准策略的方法。 首先,光刻投影设备中的多批基板中的所有基板使用预定义的对准策略顺序对准和曝光。 然后,确定多批基板中的每个基板的对准数据。 接下来,选择每批衬底中的至少一个衬底,以在每批中提供包括至少一个衬底的一组选定衬底。 在计量工具中,确定每个所选择的基底的覆盖数据。 然后,为预定义的对齐策略和其他可能的对准策略计算预定义重叠指示符的覆盖指示符值。 在该计算中,使用所选择的基板的对准数据和覆盖数据。 最后,确定最佳对准策略,该策略被定义为预定义对准策略中的对准策略和具有最低覆盖指标值的其他可能的对准策略。