知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

38 条记录 (耗时 0.02 秒)

    Battery Controller and Voltage Abnormality Detection Method
    2.
    发明申请
    Battery Controller and Voltage Abnormality Detection Method 审中-公开
    电池控制器和电压异常检测方法

    公开(公告)号：US20120062238A1

    公开(公告)日：2012-03-15

    申请号：US13213186

    申请日：2011-08-19

    申请人： Tatsuhiko Kawasaki ,  Kenji Hara ,  Toshiyuki Nanto ,  Hirofumi Takahashi

    发明人： Tatsuhiko Kawasaki ,  Kenji Hara ,  Toshiyuki Nanto ,  Hirofumi Takahashi

    IPC分类号： G01N27/416

    CPC分类号： G01R19/16542 ,  G01R31/396 ,  G01R35/00

    摘要： A battery controller for controlling an assembled battery configured by connecting battery groups each including battery cells, includes: voltage measuring units that are provided respectively for the battery groups each to measure a voltage of each of the battery cells included in a corresponding battery group; a minimum value detecting unit that detects a minimum value of the battery cells for each of the battery groups based upon the measured voltage of each of the battery cells; a reference value setting unit that sets a reference value used to determine an abnormal voltage drop for each of the battery groups based upon the measured voltage of each of the battery cells; and an abnormality determining unit that makes a determination that an abnormal voltage drop is present, if a difference between the reference value and the minimum value exceeds a predetermined value, for each of the battery groups.

    摘要翻译： 一种电池控制器，用于控制通过连接包括电池单元的电池组而构成的组合电池，包括：电压测量单元，其分别设置用于各电池组，用于测量包括在相应的电池组中的每个电池单元的电压; 最小值检测单元，其基于每个电池单元的测量电压来检测每个电池组的电池单元的最小值; 基准值设定部，基于各电池单元的测定电压，设定用于确定各个电池组的异常电压降的基准值; 以及异常判定单元，对于每个电池组，如果基准值和最小值之间的差超过预定值，则确定存在异常电压降的确定。

    Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesion
    7.
    发明授权
    Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesion 有权
    铜阳极或含磷铜阳极，在半导体晶片上电镀铜的方法，以及具有低颗粒粘附性的半导体晶片

    公开(公告)号：US08216438B2

    公开(公告)日：2012-07-10

    申请号：US12524623

    申请日：2008-10-06

    申请人： Akihiro Aiba ,  Hirofumi Takahashi

    发明人： Akihiro Aiba ,  Hirofumi Takahashi

    IPC分类号： C25B11/04

    CPC分类号： C22C9/00 ,  C25D7/12 ,  C25D17/10

    摘要： Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99 wt % or higher, and silicon as an impurity is 10 wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating.

    摘要翻译： 提供一种用于在半导体晶片上进行电镀铜的铜阳极或含磷铜阳极，其中铜阳极或不含磷的含磷铜阳极的纯度为99.99重量％以上，硅为杂质 为10重量ppm以下。 另外提供了一种电镀铜方法，其能够有效地防止电镀对象，特别是在电镀铜期间的半导体晶片上的颗粒附着，用于这种电镀铜的含磷铜阳极，以及包含铜层的半导体晶片 具有由上述铜电镀形成的低颗粒粘附。

    ELECTROLYTIC COPPER PLATING SOLUTION FOR FILLING FOR FORMING MICROWIRING OF COPPER FOR ULSI
    8.
    发明申请
    ELECTROLYTIC COPPER PLATING SOLUTION FOR FILLING FOR FORMING MICROWIRING OF COPPER FOR ULSI 审中-公开
    用于形成用于ULSI铜的微波填充的电解铜镀层溶液

    公开(公告)号：US20120103820A1

    公开(公告)日：2012-05-03

    申请号：US13378529

    申请日：2010-06-22

    申请人： Junnosuke Sekiguchi ,  Hirofumi Takahashi ,  Akihiro Aiba

    发明人： Junnosuke Sekiguchi ,  Hirofumi Takahashi ,  Akihiro Aiba

    IPC分类号： C25D3/38 ,  C25D7/06 ,  C25D5/02

    CPC分类号： C25D3/38 ,  C25D7/0607 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An object of the present invention is to provide an electrolytic copper plating solution which can suppress, upon electrolytic copper plating on a copper seed layer during fabrication of ULSI copper microwiring (damascene copper wiring) having trends to further miniaturization, dissolution of the copper seed layer and accordingly can suppress occurrence of voids on the inner wall of vias/trenches.The present invention provides an electrolytic copper plating solution for filling for forming microwiring for ULSI, characterized in that it has a pH of 1.8 or higher and 3.0 or lower. The electrolytic copper plating solution preferably comprises a saturated carboxylic acid having 1 or more and 4 or less carbon atoms at 0.01 mol/L or more and 2.0 mol/L or less.

    摘要翻译： 本发明的目的是提供一种电解镀铜溶液，其可以在制造具有进一步小型化的ULSI铜微接线（镶嵌铜布线）的铜籽晶层上的电解铜电镀时抑制铜籽晶层的溶解 因此能够抑制通孔/沟槽的内壁的空隙的发生。 本发明提供一种电镀铜电镀液，用于填充用于形成ULSI的微阵列，其特征在于其pH为1.8以上且3.0以下。 电解镀铜液优选含有0.01mol / L以上且2.0mol / L以下的碳原子数为1以上且4以下的饱和羧酸。