公开(公告)号：US5759971A

公开(公告)日：1998-06-02

申请号：US509222

申请日：1995-07-31

申请人： Kazuyoshi Manako

发明人： Kazuyoshi Manako

IPC分类号： C11D7/02 ,  C11D7/08 ,  C11D11/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  B08B3/08 ,  C11D7/18

CPC分类号： H01L21/02052 ,  C11D11/0047 ,  C11D7/08

摘要： A semiconductor wafer cleaning liquid includes an aqueous hydrogen fluoride (HF) solution having a HF concentration between 0.03% and 0.05% by weight, which is adjusted to 20.degree. C. or below and into which ozone is directly dissolved up to a saturation point. A method for cleaning semiconductor wafers incudes the steps of charging an aqueous HF solution adjusted to 20.degree. C. or below and having an HF concentration between 0.03% and 0.05% by weight into a treatment bath; dissolving ozone into the aqueous solution up to a saturation point to prepare a cleaning liquid; dipping to etch semiconductor substrate into the cleaning liquid in the treatment bath; and rinsing the semiconductor substrate with pure or ozone-dissolved water in a bath separate from the treatment bath.

摘要翻译： 半导体晶片清洗液包括HF浓度在0.03％至0.05％（重量）之间的氟化氢水溶液，其被调节至20℃或更低，臭氧直接溶解到饱和点。 一种清洗半导体晶片的方法包括以下步骤：将调节至20℃或更低的HF水溶液和0.03重量％至0.05重量％的HF浓度加入到处理浴中; 将臭氧溶解到水溶液中至饱和点以制备清洗液; 浸渍以将半导体衬底蚀刻到处理浴中的清洗液中; 并在与处理浴分开的浴中用纯的或臭氧溶解的水冲洗半导体衬底。

公开(公告)号：US5979474A

公开(公告)日：1999-11-09

申请号：US76119

申请日：1998-05-12

申请人： Kazuyoshi Manako

发明人： Kazuyoshi Manako

IPC分类号： B08B3/10 ,  H01L21/00 ,  B08B3/04

CPC分类号： H01L21/67057 ,  B08B3/10 ,  B08B2203/002 ,  Y10S134/902

摘要： A cleaning equipment for semiconductor substrates, which includes a cleaning tank 2 for cleaning the semiconductor substrates and a circulation filtering device, wherein the cleaning equipment has a pump 6 and a filter unit 7 disposed in a filtering line for cleaning impurities contained in a cleaning liquid, a gas mixing device 8 having a temperature-adjusting function and which is disposed downstream of the pump 6 and the filter unit 7 for adjusting a temperature of the cleaning liquid and dissolving the gas into the cleaning liquid, and a gas-separating device 9 which is disposed downstream of the gas mixing device 8 for separating an undissolved portion of the mixed gas from the cleaning liquid.

摘要翻译： 一种用于半导体衬底的清洁设备，其包括用于清洁半导体衬底的清洁槽2和循环过滤装置，其中清洁设备具有泵6和过滤器单元7，过滤器单元7设置在用于清洁包含在清洗液体中的杂质的过滤管线中 具有温度调节功能的气体混合装置8，其设置在泵6的下游，并且用于调节清洗液的温度并将气体溶解到清洗液中的过滤器单元7以及气体分离装置9 其设置在气体混合装置8的下游，用于将混合气体的未溶解部分与清洗液分离。