公开(公告)号：US5919282A

公开(公告)日：1999-07-06

申请号：US817484

申请日：1997-04-17

申请人： Yosuke Hoshijima ,  Kazuo Oonuki ,  Kazuhisa Fukuda ,  Masao Iguchi ,  Hidekazu Kakizoe ,  Hiroki Gofuku ,  Hiroshi Nagahama ,  Hiroaki Yamamoto

发明人： Yosuke Hoshijima ,  Kazuo Oonuki ,  Kazuhisa Fukuda ,  Masao Iguchi ,  Hidekazu Kakizoe ,  Hiroki Gofuku ,  Hiroshi Nagahama ,  Hiroaki Yamamoto

IPC分类号： C21C7/10

CPC分类号： C21C7/10

摘要： In a process for vacuum refining a molten steel wherein a refining flux is used, a fuel gas and an oxygen gas are spouted into the outlet of a top-blown lance of a vacuum refining apparatus to form a burner flame below the top-blown lance, and, at the same time, a refining flux is fed into the top-blown lance with the aid of an oxygen gas as a carrier gas and further passed through the burner flame, and the heated and melted refining flux is allowed to arrive at the surface of the molten steel. In this case, the refining flux feed rate and the circulating flow rate of the molten steel during vacuum refining are regulated so as to have a predetermined relationship, achieving a low flux consumption throughout a period of single refractory life of the vacuum tank.

公开(公告)号：US08686432B2

公开(公告)日：2014-04-01

申请号：US13537564

申请日：2012-06-29

申请人： Kazuhisa Fukuda

发明人： Kazuhisa Fukuda

IPC分类号： H01L29/15

CPC分类号： H01L33/20 ,  H01L33/0095

摘要： A semiconductor device composed of a Group III nitride semiconductor has the following structure. A substrate has on it an n-type first semiconductor layer, an active layer, and a p-type second semiconductor layer in this order. Two first end faces are formed by cleavage and oppose each other in planar view. Two trenches extend to the two first end faces in the direction orthogonal to the first end faces in planar view. Bottoms of the trenches are positioned at least below the lower surface of the active layer. Second end faces are formed by laser scribing in the direction orthogonal to the first end faces and outside the trenches.

摘要翻译： 由III族氮化物半导体构成的半导体器件具有以下结构。 衬底上依次具有n型第一半导体层，有源层和p型第二半导体层。 两个第一端面在平面视图中通过切割和彼此相对形成。 在平面图中，两个沟槽在与第一端面正交的方向上延伸到两个第一端面。 沟槽的底部至少位于有源层的下表面下方。 第二端面通过在与第一端面正交的方向上和沟槽外部的激光划线形成。

公开(公告)号：US06275550B1

公开(公告)日：2001-08-14

申请号：US09275264

申请日：1999-03-23

申请人： Kazuhisa Fukuda

发明人： Kazuhisa Fukuda

IPC分类号： H04L700

CPC分类号： H04L7/0331

摘要： A phase detecting/collating circuit collates a phase of a reception serial data input from outside through an external interface circuit, a phase of the reception data shift clock output from the clock frequency divider/corrector circuit, and a phase of a phase collating clock obtained by delaying the reception data shift clock by ¼ periodic cycle of the reception data shift clock by means of the delay circuit. By the phase collation in the phase detecting/collating circuit, if a difference in phase capable of generating a reception error in the data transmission circuit is detected, the clock shortening timing signal or the clock elongating timing signal is output. A reception clock frequency divider/corrector circuit corrects such as to shorten or elongate said reception data shift clock when a clock shortening timing signal or a clock elongating timing signal is input, respectively. With this effect, the reception operation in the data transmission circuit is executed always normally.

摘要翻译： 相位检测/对照电路通过外部接口电路将从外部输入的接收串行数据的相位，从时钟分频器/校正器电路输出的接收数据移位时钟的相位和获得的相位对准时钟的相位进行比较 通过延迟电路将接收数据移位时钟的接收数据移位时钟延迟¼周期周期。 通过相位检测/对照电路中的相位校正，如果检测到能够产生数据发送电路中的接收错误的相位差，则输出时钟缩短定时信号或时钟延长定时信号。 分别在输入时钟缩短定时信号或时钟延长定时信号时，接收时钟分频器/校正器电路校正诸如缩短或延长所述接收数据移位时钟。 由此，始终正常地执行数据发送电路的接收动作。

公开(公告)号：US08984334B2

公开(公告)日：2015-03-17

申请号：US13631272

申请日：2012-09-28

申请人： Kazuhisa Fukuda

发明人： Kazuhisa Fukuda

IPC分类号： G06F11/00 ,  G06F11/07 ,  G06F9/48 ,  G06F11/20

CPC分类号： G06F11/2028 ,  G06F9/4881 ,  G06F11/0715 ,  G06F11/0793 ,  G06F11/203 ,  G06F11/2035 ,  G06F11/2043 ,  G06F2201/805 ,  G06F2201/82 ,  G06F2201/85

摘要： A processor includes a plurality of processing sections, each of which executes a predetermined process. A plurality of fault detecting circuits are respectively provided for the plurality of processing sections, to detect a fault in one of the plurality of processing sections as a fault processing section to generate a fault detection signal. A fault monitoring and control section controls a normal processing section as at least one of the plurality of processing sections other than the fault processing section to execute a relieving process in response to the fault detection signal. The relieving process is determined based on a process load of the fault processing section, a process load of the normal processing section, and priority levels of processes to be executed by the fault processing section and the normal processing section.

摘要翻译： 处理器包括多个处理部分，每个处理部分执行预定处理。 分别为多个处理部提供多个故障检测电路，以将多个处理部中的一个处理部的故障检测为故障处理部，生成故障检测信号。 故障监视和控制部分控制除了故障处理部分之外的多个处理部分中的至少一个的正常处理部分，以响应故障检测信号执行缓解处理。 基于故障处理部的处理负荷，正常处理部的处理负荷以及由故障处理部和正常处理部执行的处理的优先级来确定解除处理。

公开(公告)号：US08182575B2

公开(公告)日：2012-05-22

申请号：US12682935

申请日：2008-10-16

申请人： Hiroki Gofuku ,  Yuki Kuwauchi ,  Wataru Nagai ,  Kazuhisa Fukuda ,  Takashi Sawai

发明人： Hiroki Gofuku ,  Yuki Kuwauchi ,  Wataru Nagai ,  Kazuhisa Fukuda ,  Takashi Sawai

IPC分类号： C22B1/16 ,  C21B13/08

CPC分类号： C22B7/02 ,  C21B13/0046 ,  C21B13/105 ,  C21B13/143 ,  C21C5/38 ,  C22B1/245 ,  C22B1/248 ,  C22B5/10 ,  Y02P10/216

摘要： A producing method of direct reduced iron includes the steps of: drying an oxidized iron raw material selected from a group including iron ore and iron-making dust generated in an iron-making process to have a predetermined moisture content; mixing the oxidized iron raw material subjected to the drying step and a reducing material having a predetermined moisture content to obtain a mixture; pulverizing the mixture obtained in the mixing step for 80% minus-sieve to have a particle diameter of 70 μm to 500 μm; kneading the mixture after the moisture content of the mixture subjected to the pulverizing step is adjusted; agglomerating the mixture subjected to the kneading step to be agglomerate; and reducing the agglomerate obtained in the agglomerating step by a rotary hearth furnace to generate direct reduced iron.

摘要翻译： 直接还原铁的制造方法包括以下步骤：将选自铁矿石中的氧化铁原料和在制铁过程中产生的铁制粉尘干燥以具有预定的水分含量; 将经过干燥步骤的氧化铁原料和具有预定水分含量的还原材料混合，得到混合物; 将混合工序中得到的混合物粉碎80％的负筛子，使其粒径为70〜500μm， 调整经过粉碎步骤的混合物的水分含量之后捏合该混合物; 使经过捏合步骤的混合物凝聚成团聚物; 并且通过旋转炉床炉减少在附聚步骤中获得的附聚物以产生直接还原铁。

公开(公告)号：US07741654B2

公开(公告)日：2010-06-22

申请号：US11575387

申请日：2005-09-15

申请人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

发明人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

IPC分类号： H01L29/12 ,  H01L31/00 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01S5/223

摘要： The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.

摘要翻译： 本发明提供一种电流注入效率优异的半导体激光器。 在根据本发明的内条型半导体激光器中，p型包层309具有彼此交替层叠的由GaN层和Al 0.1 Ga 0.9 N层构成的超晶格结构。 p型覆层309具有高位错密度的一部分和低位错密度的一部分。 也就是说，在电流限制区域308的开口正上方的区域中的位错密度相对较低，而位于电流限制区域308正上方的位置的位错密度相对较高。

公开(公告)号：US08296602B2

公开(公告)日：2012-10-23

申请号：US11474948

申请日：2006-06-27

申请人： Kazuhisa Fukuda

发明人： Kazuhisa Fukuda

IPC分类号： G06F11/00

CPC分类号： G06F11/2028 ,  G06F9/4881 ,  G06F11/0715 ,  G06F11/0793 ,  G06F11/203 ,  G06F11/2035 ,  G06F11/2043 ,  G06F2201/805 ,  G06F2201/82 ,  G06F2201/85

摘要： A processor includes a plurality of processing sections, each of which executes a predetermined process. A plurality of fault detecting circuits are respectively provided for the plurality of processing sections, to detect a fault in one of the plurality of processing sections as a fault processing section to generate a fault detection signal. A fault monitoring and control section controls a normal processing section as at least one of the plurality of processing sections other than the fault processing section to execute a relieving process in response to the fault detection signal. The relieving process is determined based on a process load of the fault processing section, a process load of the normal processing section, and priority levels of processes to be executed by the fault processing section and the normal processing section.

摘要翻译： 处理器包括多个处理部分，每个处理部分执行预定处理。 分别为多个处理部提供多个故障检测电路，以将多个处理部中的一个处理部的故障检测为故障处理部，生成故障检测信号。 故障监视和控制部分控制除了故障处理部分之外的多个处理部分中的至少一个的正常处理部分，以响应故障检测信号执行缓解处理。 基于故障处理部的处理负荷，正常处理部的处理负荷以及由故障处理部和正常处理部执行的处理的优先级来确定解除处理。

公开(公告)号：US20080063020A1

公开(公告)日：2008-03-13

申请号：US11575387

申请日：2005-09-15

申请人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

发明人： Kazuhisa Fukuda ,  Chiaki Sasaoka ,  Akitaka Kimura

IPC分类号： H01S5/323

CPC分类号： H01S5/32341 ,  H01S5/223

摘要： The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.

摘要翻译： 本发明提供一种电流注入效率优异的半导体激光器。 在根据本发明的内条型半导体激光器中，ap型包覆层309具有由GaN层和Al 0.1 Ga 0.9 N层组成的超晶格结构， 交替层叠在一起。 p型覆层309具有高位错密度的一部分和低位错密度的一部分。 也就是说，在电流限制区域308的开口正上方的区域中的位错密度相对较低，而位于电流限制区域308正上方的位置的位错密度相对较高。

公开(公告)号：US20060294422A1

公开(公告)日：2006-12-28

申请号：US11474948

申请日：2006-06-27

申请人： Kazuhisa Fukuda

发明人： Kazuhisa Fukuda

IPC分类号： G06F11/00

CPC分类号： G06F11/2028 ,  G06F9/4881 ,  G06F11/0715 ,  G06F11/0793 ,  G06F11/203 ,  G06F11/2035 ,  G06F11/2043 ,  G06F2201/805 ,  G06F2201/82 ,  G06F2201/85

摘要： A processor includes a plurality of processing sections, each of which executes a predetermined process. A plurality of fault detecting circuits are respectively provided for the plurality of processing sections, to detect a fault in one of the plurality of processing sections as a fault processing section to generate a fault detection signal. A fault monitoring and control section controls a normal processing section as at least one of the plurality of processing sections other than the fault processing section to execute a relieving process in response to the fault detection signal. The relieving process is determined based on a process load of the fault processing section, a process load of the normal processing section, and priority levels of processes to be executed by the fault processing section and the normal processing section.

公开(公告)号：US20100272142A1

公开(公告)日：2010-10-28

申请号：US12662185

申请日：2010-04-05

申请人： Kazuhisa Fukuda

发明人： Kazuhisa Fukuda

IPC分类号： H01S5/02 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0282 ,  H01S2304/04

摘要： Provided is a semiconductor laser element having a first protective film provided at least over the light emitting end face of an active layer (3-period multiple quantum well (MQW) active layer); and a second protective film provided over the first protective film, wherein, the first protective film is provided between a semiconductor which composes the light emitting end face and the second protective film, and a portion of the first protective film, brought into direct contact with the semiconductor, is mainly composed of a rutile-structured TiO2 film.

摘要翻译： 本发明提供一种半导体激光元件，其具有设置在有源层（3周期多量子阱（MQW）有源层）的发光端面的至少上方的第1保护膜）。 以及设置在所述第一保护膜上的第二保护膜，其中，所述第一保护膜设置在构成所述发光端面的半导体与所述第二保护膜之间，以及所述第一保护膜的与所述第一保护膜直接接触的部分 半导体主要由金红石型TiO 2膜组成。