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公开(公告)号:US20130249100A1
公开(公告)日:2013-09-26
申请号:US13531843
申请日:2012-06-25
IPC分类号: H01L23/48
CPC分类号: H01L23/13 , H01L23/24 , H01L23/367 , H01L23/3677 , H01L23/3738 , H01L23/49811 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/26175 , H01L2224/291 , H01L2224/32225 , H01L2224/45124 , H01L2224/48137 , H01L2224/48227 , H01L2224/73265 , H01L2224/83385 , H01L2924/00013 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/10323 , H01L2924/1033 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/3511 , H01L2924/00012 , H01L2924/014 , H01L2224/13099 , H01L2224/05099 , H01L2224/05599 , H01L2924/00
摘要: A power semiconductor device module includes: a base plate; an insulating substrate mounted on the base plate; and a diode chip mounted on the insulating substrate, wherein the insulating substrate has an upper surface electrode layer disposed on an upper main surface and a lower surface electrode layer disposed on a lower main surface, the diode chip is joined onto the upper surface electrode layer, the lower surface electrode layer is joined onto the upper main surface of the base plate, and a thermal resistance reducing section that reduces thermal resistance is provided in lower surface electrode layer or the base plate of a portion corresponding to a place immediately below the diode chip.
摘要翻译: 功率半导体器件模块包括:基板; 安装在基板上的绝缘基板; 以及安装在所述绝缘基板上的二极管芯片,其中所述绝缘基板具有设置在上主表面上的上表面电极层和设置在下主表面上的下表面电极层,所述二极管芯片接合到所述上表面电极层 ,下表面电极层被接合到基板的上主表面上,并且在下表面电极层或与二极管正下方的位置相对应的部分的基板上设置降低热阻的热阻降低部分 芯片。