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    OPTICAL ELEMENT MANUFACTURING METHOD, OPTICAL ELEMENT EXPOSURE DEVICE, OPTICAL ELEMENT, LIGHTING OPTICAL DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS
    1.
    发明申请
    OPTICAL ELEMENT MANUFACTURING METHOD, OPTICAL ELEMENT EXPOSURE DEVICE, OPTICAL ELEMENT, LIGHTING OPTICAL DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS 有权
    光学元件制造方法，光学元件曝光装置，光学元件，照明光学装置，显示装置和电子装置

    公开(公告)号：US20110080538A1

    公开(公告)日：2011-04-07

    申请号：US12890730

    申请日：2010-09-27

    申请人： KUNIHIRO SHIOTA ,  KOJI MIMURA

    发明人： KUNIHIRO SHIOTA ,  KOJI MIMURA

    IPC分类号： G02F1/1335 ,  G03F7/20 ,  G03B27/54 ,  F21V11/00

    CPC分类号： G03F7/0007 ,  G02B2207/123 ,  G02F1/133524 ,  G03F7/2053

    摘要： Provided is an optical element manufacturing method that is capable of forming various kinds of shapes and capable of achieving sophisticated functions, improved yields, and cost reductions. The method includes: a step that applies a transparent photosensitive resin on a transparent substrate with light-shielding patterns provided thereon; a step that forms transparent layers by performing patterning through irradiating exposure light of an arbitrary amount on the transparent photosensitive resin via the transparent substrate with the light-shielding patterns provided thereon; a step that forms light absorption layers by filling a black curable resin between the transparent layers; and an irradiation step that irradiates the exposure light in an oblique direction to the surface of the transparent substrate where the light-shielding patterns are formed in a state where the transparent substrate is being bent.

    摘要翻译： 提供一种能够形成各种形状并且能够实现复杂功能，提高产量和降低成本的光学元件制造方法。 该方法包括：将透明感光树脂施加在其上设置有遮光图案的透明基板上的步骤; 通过在其上设置有遮光图案的透明基板在透明感光性树脂上照射任意量的曝光光进行图案化，形成透明层的工序; 通过在透明层之间填充黑色可固化树脂形成光吸收层的步骤; 以及照射步骤，其在透明基板被弯曲的状态下沿倾斜方向照射形成有遮光图案的透明基板的表面。

    THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY PANEL AND ELECTRONIC DEVICE USING SAME
    2.
    发明申请
    THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY PANEL AND ELECTRONIC DEVICE USING SAME 有权
    薄膜晶体管及其制造方法和液晶显示面板及使用其的电子器件

    公开(公告)号：US20100244037A1

    公开(公告)日：2010-09-30

    申请号：US12727352

    申请日：2010-03-19

    申请人： KUNIHIRO SHIOTA

    发明人： KUNIHIRO SHIOTA

    IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78618 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78675

    摘要： A thin film transistor (TFT) is provided which is capable of reducing leakage currents in a polycrystalline silicon TFT without causing an increase in manufacturing processes. Source/drain regions of an activated layer of the TFT to be formed in a circuit region and pixel region formed on a glass substrate of a liquid crystal display panel for a mobile phone is formed so that its boron impurity falls within a range of 2.5×1018/cm3 to 5.5×1018/cm3 and its impurity activation falls within a range of 1% to 7%.

    摘要翻译： 提供薄膜晶体管（TFT），其能够减少多晶硅TFT中的漏电流，而不会导致制造工艺的增加。 形成在电路区域中的TFT的激活层的源极/漏极区域和形成在用于移动电话的液晶显示面板的玻璃基板上的像素区域形成为使得其硼杂质落入2.5× 1018 / cm 3至5.5×10 18 / cm 3，其杂质活化在1％至7％的范围内。