公开(公告)号：US11800705B2

公开(公告)日：2023-10-24

申请号：US17538747

申请日：2021-11-30

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Joon Young Kwak ,  Eunpyo Park ,  Suyoun Lee ,  Inho Kim ,  Jong-Keuk Park ,  Jaewook Kim ,  Jongkil Park ,  YeonJoo Jeong

IPC分类号： H01L29/788 ,  H01L29/43 ,  H01L29/423 ,  H10B41/30 ,  H01L29/66

CPC分类号： H10B41/30 ,  H01L29/42324 ,  H01L29/437 ,  H01L29/66825 ,  H01L29/788

摘要： A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.