公开(公告)号：US20160284901A1

公开(公告)日：2016-09-29

申请号：US14421866

申请日：2013-08-30

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Ara CHO ,  Kyung Hoon YOON ,  SeJin AHN ,  Jae Ho YUN ,  Young Joo EO ,  Jihye GWAK ,  SeoungKyu AHN ,  Jun Sik CHO ,  Jin Su YOO ,  Kihwan KIM ,  Joo Hyung PARK

IPC: H01L31/032 ,  C23C14/58 ,  H01L31/18 ,  H01L31/0392

CPC classification number: H01L31/0322 ,  C23C14/5806 ,  C23C14/5866 ,  H01L31/03923 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: Disclosed are a method of manufacturing a CI(G)S-based thin film including aging of a slurry composed of binary nanoparticles, and a CI(G)S-based thin film manufactured thereby. The method of manufacturing the CI(G)S-based thin film includes: preparing CI(G)S-based binary nanoparticles; mixing the binary nanoparticles, a solution precursor including a CI(G)S-based element, a solvent and a chelating agent, thus preparing a hybrid slurry; aging the hybrid slurry for 5 to 10 days; subjecting the aged hybrid slurry to coating, thus forming a CI(G)S-based thin film; and subjecting the CI(G)S-based thin film to heat treatment. Thereby, high reproducibility can be ensured upon manufacturing a CI(G)S-based thin film for solar cells, and thus reliability of the produced thin film can be increased.

Abstract translation: 公开了一种制造包含由二元纳米颗粒构成的浆料的老化的CI（G）S基薄膜和由其制造的CI（G）S基薄膜）的方法。 制备CI（G）S基薄膜的方法包括：制备CI（G）S基二元纳米粒子; 混合二元纳米颗粒，包含CI（G）S基元素的溶液前体，溶剂和螯合剂，从而制备杂化浆料; 将混合浆料老化5至10天; 对老化的混合浆料进行涂布，从而形成CI（G）S基薄膜; 并对CI（G）S基薄膜进行热处理。 因此，在制造用于太阳能电池的CI（G）S基薄膜时，可以确保高的再现性，从而可以提高制造的薄膜的可靠性。

公开(公告)号：US20150287868A1

公开(公告)日：2015-10-08

申请号：US14676075

申请日：2015-04-01

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Jun Sik CHO ,  Jin Su YOO ,  Joo Hyung PARK ,  Jae Ho YUN ,  Jihye GWAK ,  SeoungKyu AHN ,  Young Joo EO ,  SeJin AHN ,  Ara CHO ,  Kihwan KIM ,  Kyung Hoon YOON ,  Kee Shik SHIN

IPC: H01L31/0747 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0236

CPC classification number: H01L31/0747 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/50

Abstract: Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.

Abstract translation: 公开了一种超薄HIT太阳能电池，包括：n型或p型晶体硅衬底; 具有不同于硅衬底的掺杂类型的非晶硅发射极层; 以及在所述晶体硅衬底和所述非晶硅发射极层之间形成的本征非晶硅钝化层，其中所述HIT太阳能电池还包括在其上表面上由ZnO制成的透明导电氧化物层，并且所述晶体硅衬底的表面为 不织构化，但只有透明导电氧化物层的表面被纹理化，从而可以使用非常薄的晶体硅衬底，最终实现具有非常低的总厚度的超薄HIT太阳能电池，同时保持光捕获能力。

公开(公告)号：US20160049533A1

公开(公告)日：2016-02-18

申请号：US14780048

申请日：2014-04-01

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Young Joo EO ,  Kyung Hoon YOON ,  SeJin AHN ,  Jihye GWAK ,  Jae Ho YUN ,  Ara CHO ,  Kee Shik SHIN ,  SeoungKyu AHN ,  Jun Sik CHO ,  Jin Su YOO ,  Sang Hyun PARK ,  Joo Hyung PARK

IPC: H01L31/032 ,  H01L31/18 ,  H01L31/0445

CPC classification number: H01L31/0322 ,  H01L31/0445 ,  H01L31/18 ,  Y02E10/541

Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

Abstract translation: 公开了一种形成太阳能电池的黄铜矿光吸收层的方法，包括：形成包含黄铜矿化合物前体的薄膜; 并且在所述薄膜上照射光，其中所述黄铜矿化合物前体吸收光能并因此结晶。 当形成黄铜矿光吸收层时，施加光而不加热，从而防止由于Mo后电极的加热而由于热而导致的衬底损伤和MoSe2的形成的问题。 此外，首先辐射深度穿透薄膜的长波长光，并且随后辐射浅穿透薄膜的短波长光，从而从薄的底部依次形成黄铜矿光吸收层 电影。