ULTRA THIN HIT SOLAR CELL AND FABRICATING METHOD OF THE SAME
    1.
    发明申请
    ULTRA THIN HIT SOLAR CELL AND FABRICATING METHOD OF THE SAME 有权
    超薄型太阳能电池及其制造方法

    公开(公告)号:US20150287868A1

    公开(公告)日:2015-10-08

    申请号:US14676075

    申请日:2015-04-01

    Abstract: Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.

    Abstract translation: 公开了一种超薄HIT太阳能电池,包括:n型或p型晶体硅衬底; 具有不同于硅衬底的掺杂类型的非晶硅发射极层; 以及在所述晶体硅衬底和所述非晶硅发射极层之间形成的本征非晶硅钝化层,其中所述HIT太阳能电池还包括在其上表面上由ZnO制成的透明导电氧化物层,并且所述晶体硅衬底的表面为 不织构化,但只有透明导电氧化物层的表面被纹理化,从而可以使用非常薄的晶体硅衬底,最终实现具有非常低的总厚度的超薄HIT太阳能电池,同时保持光捕获能力。

    METHOD OF FORMING CHALCOPYRITE LIGHT-ABSORBING LAYER
    4.
    发明申请
    METHOD OF FORMING CHALCOPYRITE LIGHT-ABSORBING LAYER 有权
    形成聚氯乙烯吸收层的方法

    公开(公告)号:US20160049533A1

    公开(公告)日:2016-02-18

    申请号:US14780048

    申请日:2014-04-01

    CPC classification number: H01L31/0322 H01L31/0445 H01L31/18 Y02E10/541

    Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

    Abstract translation: 公开了一种形成太阳能电池的黄铜矿光吸收层的方法,包括:形成包含黄铜矿化合物前体的薄膜; 并且在所述薄膜上照射光,其中所述黄铜矿化合物前体吸收光能并因此结晶。 当形成黄铜矿光吸收层时,施加光而不加热,从而防止由于Mo后电极的加热而由于热而导致的衬底损伤和MoSe2的形成的问题。 此外,首先辐射深度穿透薄膜的长波长光,并且随后辐射浅穿透薄膜的短波长光,从而从薄的底部依次形成黄铜矿光吸收层 电影。

    CRUCIBLE FOR ELECTRON-BEAM EVAPORATOR
    7.
    发明申请
    CRUCIBLE FOR ELECTRON-BEAM EVAPORATOR 有权
    可用于电子束蒸发器

    公开(公告)号:US20170044658A1

    公开(公告)日:2017-02-16

    申请号:US15204311

    申请日:2016-07-07

    CPC classification number: C23C14/243 C23C14/14 C23C14/30

    Abstract: Disclosed is a crucible that exhibits stable evaporation efficiency and durability with respect to Al, is used in an evaporation source of an electron-beam evaporator, and includes a storage unit, which includes a wall and a bottom and in which a deposition material is placed, and a wetting prevention unit that includes another wall, which is taller than the wall of the storage unit, and another bottom, and is combined with an exterior of the storage unit. The wetting prevention unit is provided so that only the wall of the storage unit is wet with Al, and accordingly, the lifespan of the crucible is lengthened. Further, contact with the ceramic material in order to prevent wetting is minimized, thereby preventing a reduction in the physical properties of the thin film due to the impurities mixed with the deposited Al.

    Abstract translation: 公开了一种在电子束蒸发器的蒸发源中使用表现出稳定的蒸发效率和相对于Al的耐久性的坩埚,并且包括包括壁和底部并且沉积材料放置在其中的存储单元 以及包括比存储单元的壁高的另一壁和另一底部的润湿防止单元,并且与存储单元的外部组合。 设置润湿防止单元,使得只有存储单元的壁被铝润湿,因此,坩埚的寿命被延长。 此外,为了防止润湿,与陶瓷材料的接触最小化,从而防止由于与沉积的Al混合的杂质导致的薄膜的物理性能的降低。

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