公开(公告)号：US12282250B2

公开(公告)日：2025-04-22

申请号：US17698383

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Seul Gi Kim ,  Hyun Mi Kim ,  Jin Woo Cho ,  Ki Hun Seong

IPC: G03F1/62 ,  G03F1/22 ,  G03F7/00

Abstract: This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

公开(公告)号：US11927881B2

公开(公告)日：2024-03-12

申请号：US17456839

申请日：2021-11-29

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Seul Gi Kim ,  Hyun Mi Kim ,  Jin Woo Cho ,  Ki Hun Seong

IPC: G03F1/64 ,  G03F1/62 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F1/62 ,  G03F7/11 ,  G03F7/2004

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCx in which the atomic percentage of carbon is within a range of 25% to 45%.

公开(公告)号：US12287568B2

公开(公告)日：2025-04-29

申请号：US17698404

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Seul Gi Kim ,  Hyun Mi Kim ,  Jin Woo Cho ,  Hye Young Kim

IPC: G03F1/62 ,  C01B32/184 ,  G03F7/00 ,  H01L21/02 ,  H01L21/324 ,  H01L29/16

Abstract: This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.

公开(公告)号：US12248243B2

公开(公告)日：2025-03-11

申请号：US17454377

申请日：2021-11-10

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Seul Gi Kim ,  Hyun Mi Kim ,  Hye Young Kim

IPC: G03F1/64 ,  C01B32/182 ,  G03F7/00

Abstract: This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.

公开(公告)号：US11789359B2

公开(公告)日：2023-10-17

申请号：US17539942

申请日：2021-12-01

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Hyun Mi Kim ,  Jin Woo Cho ,  Seul Gi Kim ,  Jun Hyeok Jeon

IPC: G03F1/62

CPC classification number: G03F1/62

Abstract: This application relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. In one aspect, the method includes forming a support layer of a silicon nitride material on a silicon substrate, and forming a core layer of a graphene material on the support layer. The method may also include forming a graphene defect healing layer on the core layer by selectively forming a material of MeOxNy (Me is one of Si, Al, Ti, Zr, and Hf, x+y=2) at a grain boundary of the core layer in an atomic layer deposition process using heat in order to heal defects generated in graphene forming the core layer without additional damage to the graphene. The method may further include a capping layer on the graphene defect healing layer, wherein a central portion of the silicon substrate under the support layer is removed to form an opening partially exposing the support layer.