公开(公告)号：US12282250B2

公开(公告)日：2025-04-22

申请号：US17698383

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Seul Gi Kim ,  Hyun Mi Kim ,  Jin Woo Cho ,  Ki Hun Seong

IPC: G03F1/62 ,  G03F1/22 ,  G03F7/00

Abstract: This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

公开(公告)号：US11927881B2

公开(公告)日：2024-03-12

申请号：US17456839

申请日：2021-11-29

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Seul Gi Kim ,  Hyun Mi Kim ,  Jin Woo Cho ,  Ki Hun Seong

IPC: G03F1/64 ,  G03F1/62 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F1/62 ,  G03F7/11 ,  G03F7/2004

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCx in which the atomic percentage of carbon is within a range of 25% to 45%.