公开(公告)号：US20190136130A1

公开(公告)日：2019-05-09

申请号：US16182885

申请日：2018-11-07

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Chuljong HAN ,  Byungwook YOO ,  Jiyong KIM ,  Jeongmin YI

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/02 ,  H01L31/0352

CPC classification number: C09K11/70 ,  B82Y5/00 ,  B82Y15/00 ,  C09K11/025 ,  C09K11/56 ,  C09K11/623 ,  H01L31/035218

Abstract: The present disclosure provides a quantum dot having a core-shell structure. To have superior quantum efficiency and optical stability, the quantum dot is of a five element system of Zn—Cu—In—P—S. The quantum dot includes a core formed of In(Zn)P material and doped with copper. The quantum dot further comprises a first shell formed of Cu—Zn—In—S material and surrounding the core and a second shell formed ZnS material and surrounding the first shell.

公开(公告)号：US20200291293A1

公开(公告)日：2020-09-17

申请号：US16720557

申请日：2019-12-19

Applicant: Korea Electronics Technology Institute

Inventor： Chuljong HAN ,  Jiyong KIM ,  Kyoungwon PARK

IPC: C09K11/70 ,  C09K11/08

Abstract: The present disclosure provides a manganese-doped InZnP quantum dot having high reproducibility and exhibiting superior optical efficiency, and a method of manufacturing the quantum dot. According to an aspect of an exemplary embodiment, the manganese-doped InZnP quantum dot is of manufactured by synthesizing an InZnP quantum dot by reacting indium acetate, zinc acetate, and tris(trimethylsilyl)phosphine; and then doping the InZnP quantum dot with manganese.