公开(公告)号：US20220077340A1

公开(公告)日：2022-03-10

申请号：US17136747

申请日：2020-12-29

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Kyoungwon PARK

IPC: H01L31/055 ,  H02S40/22

Abstract: A sunlight concentrating device may include a quantum dot layer having a first surface and a second surface opposite to each other, a first glass layer in contact with the first surface of the quantum dot layer, and a second glass layer in contact with the second surface of the quantum dot layer, and further include a low-refractive layer provided in a predetermined region of the first surface and/or the second surface of the quantum dot layer. The low-refractive layer is patterned, and a refractive index of the low-refractive layer is smaller than a refractive index of the quantum dot layer. The low-refractive layer totally reflects photons, being permeated from the quantum dot layer into the glass layer(s), between the glass layer(s) and the quantum dot layer so that the photons can move within a section with no loss of light thereby overcoming the theoretical limit of light concentration.

公开(公告)号：US20230143531A1

公开(公告)日：2023-05-11

申请号：US17980758

申请日：2022-11-04

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Kyoungwon PARK ,  Chuljong HAN ,  Jeongmin YI

IPC: H01L31/055 ,  C09K11/02 ,  C08F220/18

CPC classification number: H01L31/055 ,  C09K11/02 ,  C08F220/1811 ,  H01L31/042

Abstract: A light concentrator based on a quantum dot may include a resin film layer in which quantum dots are dispersed, an upper layer in contact with an upper surface of the resin film layer, and a lower layer in contact with a lower surface of the resin film layer. Each of the upper layer and the lower layer may be selected from a glass layer or a polymer layer. A photovoltaic module may include the quantum dot-based light concentrator. By optimally adjusting the longest wavelength of the quantum dots, the average transmittance of the glass layer, the material of the polymer layer, and the cross-sectional aspect ratio (length/thickness) of the light concentrator, it is possible to maximize the efficiency of the quantum dot-based light concentrator and increase the efficiency of the photovoltaic module including the light concentrator.

公开(公告)号：US20200291293A1

公开(公告)日：2020-09-17

申请号：US16720557

申请日：2019-12-19

Applicant: Korea Electronics Technology Institute

Inventor： Chuljong HAN ,  Jiyong KIM ,  Kyoungwon PARK

IPC: C09K11/70 ,  C09K11/08

Abstract: The present disclosure provides a manganese-doped InZnP quantum dot having high reproducibility and exhibiting superior optical efficiency, and a method of manufacturing the quantum dot. According to an aspect of an exemplary embodiment, the manganese-doped InZnP quantum dot is of manufactured by synthesizing an InZnP quantum dot by reacting indium acetate, zinc acetate, and tris(trimethylsilyl)phosphine; and then doping the InZnP quantum dot with manganese.

公开(公告)号：US20240097077A1

公开(公告)日：2024-03-21

申请号：US18470217

申请日：2023-09-19

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Chul Jong HAN ,  Yeong Beom LEE ,  Jeongno LEE ,  Kyoungwon PARK ,  Young Ji LIM

IPC: H01L33/46 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L2933/0025

Abstract: A barrier structure of a display device and a method of manufacturing the same are proposed. The barrier structure may include a plurality of light-transmissive photoresist patterns disposed on a substrate at predetermined intervals. The barrier structure may also include reflective films formed on an entire outer surface of the light-transmissive photoresist patterns.