公开(公告)号：US20240222466A1

公开(公告)日：2024-07-04

申请号：US18523748

申请日：2023-11-29

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Byungwook YOO ,  Min Suk OH

IPC: H01L29/51 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/513 ,  H01L29/42384 ,  H01L29/78693

Abstract: Proposed is a thin film transistor that can be manufactured by a low-temperature process The thin film transistor can be manufactured at a low processing temperature and can be applied to various types of flexible substrates without deteriorating the device characteristics Also proposed are a manufacturing method to which a low processing temperature is applied as a fabricating method thereof, a semiconductor device and an electronic device including the same.

公开(公告)号：US20150311267A1

公开(公告)日：2015-10-29

申请号：US14650141

申请日：2013-12-02

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE ,  HERAEUS PRECIOUS METALS GMBH & CO. KG

Inventor： YongHoon KIM ,  ChulJong HAN ,  Jeongno LEE ,  Byungwook YOO

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3246 ,  H01L27/3258 ,  H01L51/0023 ,  H01L51/0037 ,  H01L51/5206 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5392

Abstract: The present invention relates to a pixel structure for an active matrix display and to a method for manufacturing same, and the objective thereof is to simplify processes for manufacturing pixel electrodes and pixel defining layers and address a problem caused by a terminal which is formed at an edge part of the pixel electrode through the patterning of the pixel electrode. The pixel structure according to the present invention includes: a base substrate; a plurality of pixel circuit electrodes; an insulating layer; and a composite layer. The plurality of pixel circuit electrodes is arranged in a matrix form on the base substrate. The insulating layer is formed on the base substrate to cover the outer peripheries of the plurality of pixel circuit electrodes. The composite layer is integrally formed to cover the plurality of pixel circuit electrodes and the top of the insulating layer. In this case, the composite layer has: the conductive pixel electrodes that are formed to be respectively connected to the plurality of pixel circuit electrodes which are exposed from the insulating layer; and the non-conductive pixel defining layers on the outer peripheries of the pixel electrodes.

Abstract translation: 本发明涉及一种有源矩阵显示器的像素结构及其制造方法，其目的在于简化制造像素电极和像素限定层的工艺，并解决由在 像素电极的边缘部分通过图案化像素电极。 根据本发明的像素结构包括：基底; 多个像素电路电极; 绝缘层; 和复合层。 多个像素电路电极以矩阵形式布置在基底基板上。 绝缘层形成在基底基板上以覆盖多个像素电路电极的外周。 复合层整体地形成以覆盖多个像素电路电极和绝缘层的顶部。 在这种情况下，复合层具有：形成为分别与从绝缘层露出的多个像素电路电极连接的导电像素电极; 以及在像素电极的外周上限定层的非导电像素。

公开(公告)号：US20190136130A1

公开(公告)日：2019-05-09

申请号：US16182885

申请日：2018-11-07

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Chuljong HAN ,  Byungwook YOO ,  Jiyong KIM ,  Jeongmin YI

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/02 ,  H01L31/0352

CPC classification number: C09K11/70 ,  B82Y5/00 ,  B82Y15/00 ,  C09K11/025 ,  C09K11/56 ,  C09K11/623 ,  H01L31/035218

Abstract: The present disclosure provides a quantum dot having a core-shell structure. To have superior quantum efficiency and optical stability, the quantum dot is of a five element system of Zn—Cu—In—P—S. The quantum dot includes a core formed of In(Zn)P material and doped with copper. The quantum dot further comprises a first shell formed of Cu—Zn—In—S material and surrounding the core and a second shell formed ZnS material and surrounding the first shell.

公开(公告)号：US20180341028A1

公开(公告)日：2018-11-29

申请号：US15992060

申请日：2018-05-29

Applicant: Korea Electronics Technology Institute

Inventor： Chuljong HAN ,  Jeongno LEE ,  Minsuk OH ,  Byungwook YOO

IPC: G01T1/20 ,  G01T1/24 ,  A61B6/00 ,  G21K4/00

CPC classification number: G01T1/2002 ,  A61B6/4208 ,  A61B6/4233 ,  G01T1/1606 ,  G01T1/2018 ,  G01T1/24 ,  G21K4/00

Abstract: Disclosed are a scintillator using semiconductor quantum dots, a method of manufacturing the scintillator, and a digital image diagnostic system employing the scintillator. In one aspect, the scintillator includes a metallic reflection film made of a metal configured to transmit an X-ray and reflecting visible light and having a plurality of voids formed in a thickness direction. The scintillator also includes a polymer film formed inside the plurality of voids and being configured to include a plurality of columnar structures to convert the X-ray into the visible light. The scintillator further includes semiconductor quantum dots dispersed in the polymer film and having a decay time of tens of nanoseconds.