公开(公告)号：US09233851B2

公开(公告)日：2016-01-12

申请号：US14141544

申请日：2013-12-27

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SeokWoo Jeon ,  JinWook Baek ,  JinSup Lee

IPC: C01B31/04 ,  C23C14/14 ,  C23C16/06 ,  H01B1/04 ,  C23F1/14 ,  C23C14/20 ,  C23F1/16

CPC classification number: C01B31/0446 ,  C01B32/184 ,  C23C14/205 ,  C23F1/16 ,  H01B1/04

Abstract: The present invention relates to the method for manufacturing high quality graphene by heating carbon-based self-assembly monolayers, comprising the steps of: forming carbon source layers which are convertible into the graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; converting the carbon source layers into the graphene layer by heating the first part of the substrate using a local heating source, wherein the carbon source layers and the metal catalyst layers are formed; converting the carbon source layers into graphene by moving the local heating source and then heating the second part which is different from the first part; and removing the metal catalyst layer. The present invention also provides a substrate comprising a graphene layer manufactured by the above method and provides applications in semiconductor devices and electronic materials using the substrate.

Abstract translation: 本发明涉及通过加热碳基自组装单层制造高质量石墨烯的方法，包括以下步骤：形成碳源层，其可转化为基板上的石墨烯层; 在碳源层上形成金属催化剂层; 通过使用局部加热源加热衬底的第一部分，将碳源层转化为石墨烯层，其中形成碳源层和金属催化剂层; 通过移动局部加热源将碳源层转化成石墨烯，然后加热与第一部分不同的第二部分; 并除去金属催化剂层。 本发明还提供一种包含通过上述方法制造的石墨烯层的基板，并提供了使用该基板的半导体器件和电子材料中的应用。

公开(公告)号：US09105780B2

公开(公告)日：2015-08-11

申请号：US14152357

申请日：2014-01-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SeokWoo Jeon ,  SungHo Song ,  BoHyun Kim

IPC: C01B31/04 ,  H01L33/04 ,  H01L33/00 ,  H01L33/34 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C01B31/0484 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  Y10S977/734 ,  Y10S977/842

Abstract: A simple and easy method for fabricating graphene quantum dots with uniformed size and high quality of emission property comprises steps of, mixing graphite powders with metallic hydrate salts, forming an intercalation compound of graphite wherein metal ions are inserted by heating the mixed solution, and removing the metal ions from the intercalation compound of graphite. The graphene quantum dots is applicable to the development of electronic products in next generation such as display devices, recording devices, various sensors and nanocomputers and is applicable to biological and medicinal field as well.

Abstract translation: 用于制造具有均匀尺寸和高质量发射性质的石墨烯量子点的简单和容易的方法包括以下步骤：将石墨粉末与金属水合物盐混合，形成石墨插层化合物，其中通过加热混合溶液插入金属离子， 来自石墨插层化合物的金属离子。 石墨烯量子点适用于下一代电子产品的开发，如显示装置，记录装置，各种传感器和纳米计算机，并适用于生物和药用领域。

公开(公告)号：US20140349085A1

公开(公告)日：2014-11-27

申请号：US14097971

申请日：2013-12-05

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SeokWoo Jeon ,  ChangUi Ahn

IPC: B29C63/00

CPC classification number: B01D67/0039 ,  B01D67/0062 ,  B01D71/024 ,  Y10T428/24802

Abstract: The present invention is 3D nanostructured porous metal oxide and the method of fabricating said metal oxide, wherein said method is comprising the steps of: (a) spin-coating with photoresist onto substrate; (b) forming periodic 3D porous nanostructure patterned pore in said photoresist using proximity-field nanopatterning; (c) impregnating metal oxide into said 3D pore of photoresist having said periodic 3D pore pattern as template via atomic layered deposition (ALD) with metal precursor; and (d) obtaining 3D nanostructured porous metal oxide having the inverse shape of said template by removing said photoresist template.

Abstract translation: 本发明是3D纳米结构多孔金属氧化物和制造所述金属氧化物的方法，其中所述方法包括以下步骤：（a）将光致抗蚀剂旋涂到基底上; （b）使用接近场纳米图案在所述光致抗蚀剂中形成周期性的3D多孔纳米结构图案孔; （c）通过具有金属前体的原子层状沉积（ALD）将金属氧化物浸渍到具有所述周期性3D孔隙图案的光致抗蚀剂的3D孔中作为模板; 和（d）通过去除所述光致抗蚀剂模板获得具有所述模板的倒数形状的3D纳米结构多孔金属氧化物。