公开(公告)号：US09233851B2

公开(公告)日：2016-01-12

申请号：US14141544

申请日：2013-12-27

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SeokWoo Jeon ,  JinWook Baek ,  JinSup Lee

IPC: C01B31/04 ,  C23C14/14 ,  C23C16/06 ,  H01B1/04 ,  C23F1/14 ,  C23C14/20 ,  C23F1/16

CPC classification number: C01B31/0446 ,  C01B32/184 ,  C23C14/205 ,  C23F1/16 ,  H01B1/04

Abstract: The present invention relates to the method for manufacturing high quality graphene by heating carbon-based self-assembly monolayers, comprising the steps of: forming carbon source layers which are convertible into the graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; converting the carbon source layers into the graphene layer by heating the first part of the substrate using a local heating source, wherein the carbon source layers and the metal catalyst layers are formed; converting the carbon source layers into graphene by moving the local heating source and then heating the second part which is different from the first part; and removing the metal catalyst layer. The present invention also provides a substrate comprising a graphene layer manufactured by the above method and provides applications in semiconductor devices and electronic materials using the substrate.

Abstract translation: 本发明涉及通过加热碳基自组装单层制造高质量石墨烯的方法，包括以下步骤：形成碳源层，其可转化为基板上的石墨烯层; 在碳源层上形成金属催化剂层; 通过使用局部加热源加热衬底的第一部分，将碳源层转化为石墨烯层，其中形成碳源层和金属催化剂层; 通过移动局部加热源将碳源层转化成石墨烯，然后加热与第一部分不同的第二部分; 并除去金属催化剂层。 本发明还提供一种包含通过上述方法制造的石墨烯层的基板，并提供了使用该基板的半导体器件和电子材料中的应用。

公开(公告)号：US20150014600A1

公开(公告)日：2015-01-15

申请号：US14141544

申请日：2013-12-27

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SeokWoo JEON ,  JinWook Baek ,  JinSup Lee

IPC: C01B31/04 ,  C23C14/14 ,  C23C16/06 ,  H01B1/04 ,  C23F1/14

CPC classification number: C01B31/0446 ,  C01B32/184 ,  C23C14/205 ,  C23F1/16 ,  H01B1/04

Abstract: The present invention relates to the method for manufacturing high quality graphene by heating carbon-based self-assembly monolayers, comprising the steps of: forming carbon source layers which are convertible into the graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; converting the carbon source layers into the graphene layer by heating the first part of the substrate using a local heating source, wherein the carbon source layers and the metal catalyst layers are formed; converting the carbon source layers into graphene by moving the local heating source and then heating the second part which is different from the first part; and removing the metal catalyst layer. The present invention also provides a substrate comprising a graphene layer manufactured by the above method and provides applications in semiconductor devices and electronic materials using the substrate.

Abstract translation: 本发明涉及通过加热碳基自组装单层制造高质量石墨烯的方法，包括以下步骤：形成碳源层，其可转化为基板上的石墨烯层; 在碳源层上形成金属催化剂层; 通过使用局部加热源加热衬底的第一部分，将碳源层转化为石墨烯层，其中形成碳源层和金属催化剂层; 通过移动局部加热源将碳源层转化成石墨烯，然后加热与第一部分不同的第二部分; 并除去金属催化剂层。 本发明还提供一种包含通过上述方法制造的石墨烯层的基板，并提供了使用该基板的半导体器件和电子材料中的应用。