公开(公告)号：US10164253B2

公开(公告)日：2018-12-25

申请号：US15117441

申请日：2015-12-15

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Il-Doo Kim ,  Chan Hoon Kim

IPC: H01M4/13 ,  H01M4/36 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/587 ,  H01M4/62 ,  C01B33/02 ,  H01M4/04 ,  H01M4/133 ,  H01M4/1393 ,  C01B32/05 ,  H01M4/02

Abstract: Provided are conductive single crystal silicon particles coated with highly conductive carbon containing nanopores and an ultrathin metal film, a high capacity anode material including the same, and a preparing method thereof. The anode material includes conductive single crystal silicon particles each on which at least one element selected from group-III and group-V elements is doped; a thin metal layer formed to coat the surface of each of the conductive single crystal silicon particles; and a highly conductive carbon coating layer formed on the thin metal layer, wherein nanopores are formed between the conductive single crystal silicon particle and the carbon coating layer.

公开(公告)号：US20170162868A1

公开(公告)日：2017-06-08

申请号：US15117441

申请日：2015-12-15

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Il-Doo Kim ,  Chan Hoon Kim

IPC: H01M4/36 ,  H01M4/38 ,  H01M4/62 ,  H01M4/134

CPC classification number: H01M4/366 ,  C01B32/05 ,  C01B33/02 ,  H01M4/0404 ,  H01M4/0409 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/386 ,  H01M4/587 ,  H01M4/622 ,  H01M4/625 ,  H01M2004/027

Abstract: Provided are conductive single crystal silicon particles coated with highly conductive carbon containing nanopores and an ultrathin metal film, a high capacity anode material including the same, and a preparing method thereof. The anode material includes conductive single crystal silicon particles each on which at least one element selected from group-III and group-V elements is doped; a thin metal layer formed to coat the surface of each of the conductive single crystal silicon particles; and a highly conductive carbon coating layer formed on the thin metal layer, wherein nanopores are formed between the conductive single crystal silicon particle and the carbon coating layer.