公开(公告)号：US20150241512A1

公开(公告)日：2015-08-27

申请号：US14516556

申请日：2014-10-16

Applicant: KLA-Tencor Corporation

Inventor： Vladimir N. Faifer ,  Ian Sierra Gabriel Kelly-Morgan

IPC: G01R31/265 ,  G01R31/26

CPC classification number: G01R31/2656 ,  G01R31/2648 ,  G01R31/2831 ,  G01R31/308

Abstract: Non-Contact measurement of characteristics of p-n junctions includes illuminating an illumination area of a surface of a p-n junction with light, measuring a first junction photovoltage (JPV) signal from a first area of the p-n junction with a first electrode, measuring a second JPV signal from a second area with a second electrode, measuring a third JPV signal from a third area with a reference electrode, and determining a sheet resistance of the p-n junction top layer with a corrected first JPV signal, a corrected second JPV signal, a corrected first calibration JPV signal, a corrected second calibration JPV signal or the known sheet resistance of the calibration p-n junction.

Abstract translation: pn结的特性的非接触测量包括用光照射pn结的表面的照明区域，从与第一电极的pn结的第一区域测量第一结光电压（JPV）信号，测量第二JPV 来自具有第二电极的第二区域的信号，从具有参考电极的第三区域测量第三JPV信号，以及使用校正的第一JPV信号，校正的第二JPV信号，校正的第二JPV信号确定pn结顶层的薄层电阻 第一校准JPV信号，校正的第二校准JPV信号或校准pn结的已知薄片电阻。

公开(公告)号：US09921261B2

公开(公告)日：2018-03-20

申请号：US14516556

申请日：2014-10-16

Applicant: KLA-Tencor Corporation

Inventor： Vladimir N. Faifer ,  Ian Sierra Gabriel Kelly-Morgan

IPC: G01R31/308 ,  G01R31/265 ,  G01R31/26 ,  G01R31/28

CPC classification number: G01R31/2656 ,  G01R31/2648 ,  G01R31/2831 ,  G01R31/308

Abstract: Non-Contact measurement of characteristics of p-n junctions includes illuminating an illumination area of a surface of a p-n junction with light, measuring a first junction photovoltage (JPV) signal from a first area of the p-n junction with a first electrode, measuring a second JPV signal from a second area with a second electrode, measuring a third JPV signal from a third area with a reference electrode, and determining a sheet resistance of the p-n junction top layer with a corrected first JPV signal, a corrected second JPV signal, a corrected first calibration JPV signal, a corrected second calibration JPV signal or the known sheet resistance of the calibration p-n junction.

公开(公告)号：US20150077741A1

公开(公告)日：2015-03-19

申请号：US14485468

申请日：2014-09-12

Applicant: KLA-Tencor Corporation

Inventor： Vladimir N. Faifer

IPC: G01N21/66 ,  G01N33/00

CPC classification number: G01N21/66 ,  G01N33/00 ,  G01N2033/0095 ,  G01R31/2635

Abstract: Non-contact measurement of one or more electrical response characteristics of a LED structure includes illuminating an illumination area of a surface of a light emitting diode structure with one or more light pulses, measuring a transient of a luminescence signal from a luminescence area within the illumination area of the light emitting diode structure with a luminescence sensor, determining a first luminescence intensity at a first time of the measured transient of the luminescence signal from the light emitting diode structure, determining a second luminescence intensity at a second time different from the first time of the measured transient of the luminescence signal from the light emitting diode structure and determining an intensity of the electroluminescence component of the luminescence signal from the light emitting diode structure based on the first luminescence signal and the second luminescence signal.

Abstract translation: LED结构的一个或多个电响应特性的非接触测量包括用一个或多个光脉冲照射发光二极管结构的表面的照明区域，测量来自照明内的发光区域的发光信号的瞬变 具有发光传感器的发光二极管结构的面积，确定在来自发光二极管结构的发光信号的测量瞬态的第一时间的第一发光强度，在与第一次不同的第二时间确定第二发光强度 测量来自发光二极管结构的发光信号的瞬态，并且基于第一发光信号和第二发光信号确定来自发光二极管结构的发光信号的电致发光分量的强度。

公开(公告)号：US09746514B2

公开(公告)日：2017-08-29

申请号：US14475330

申请日：2014-09-02

Applicant: KLA-Tencor Corporation

Inventor： Ian Sierra Gabriel Kelly-Morgan ,  Vladimir N. Faifer ,  James A. Real ,  Biren Salunke ,  Ralph Nyffenegger

IPC: G01R31/10 ,  G01R31/26 ,  G01N27/00 ,  H01L21/66 ,  G01N33/00 ,  G01R1/07 ,  G01R27/08

CPC classification number: G01R31/2648 ,  G01N27/00 ,  G01N2033/0095 ,  G01R1/07 ,  G01R27/08 ,  G01R31/2632 ,  H01L22/14

Abstract: Methods and apparatus for providing measurements in p-n junctions and taking into account the lateral current for improved accuracy are disclosed. The lateral current may be controlled, allowing the spreading of the current to be reduced or substantially eliminated. Alternatively or additionally, the lateral current may be measured, allowing a more accurate normal current to be calculated by compensating for the measured spreading. In addition, the techniques utilized for controlling the lateral current and the techniques utilized for measuring the lateral current may also be implemented jointly.

公开(公告)号：US20150061714A1

公开(公告)日：2015-03-05

申请号：US14475330

申请日：2014-09-02

Applicant: KLA-Tencor Corporation

Inventor： Ian Sierra Gabriel Kelly-Morgan ,  Vladimir N. Faifer ,  James A. Real ,  Biren Salunke ,  Ralph Nyffenegger

IPC: G01R1/067 ,  G01R31/26 ,  G01N33/00 ,  G01N27/00

CPC classification number: G01R31/2648 ,  G01N27/00 ,  G01N2033/0095 ,  G01R1/07 ,  G01R27/08 ,  G01R31/2632 ,  H01L22/14

Abstract: Methods and apparatus for providing measurements in p-n junctions and taking into account the lateral current for improved accuracy are disclosed. The lateral current may be controlled, allowing the spreading of the current to be reduced or substantially eliminated. Alternatively or additionally, the lateral current may be measured, allowing a more accurate normal current to be calculated by compensating for the measured spreading. In addition, the techniques utilized for controlling the lateral current and the techniques utilized for measuring the lateral current may also be implemented jointly.

Abstract translation: 公开了用于在p-n结中提供测量并考虑横向电流以提高精度的方法和装置。 可以控制横向电流，允许电流的扩展被减小或基本上消除。 或者或另外，可以测量横向电流，允许通过补偿测量的扩展来计算更精确的正常电流。 此外，用于控制横向电流的技术和用于测量横向电流的技术也可以联合实现。

公开(公告)号：US09880200B2

公开(公告)日：2018-01-30

申请号：US14475025

申请日：2014-09-02

Applicant: KLA-Tencor Corporation

Inventor： Vladimir N. Faifer ,  Ian Sierra Gabriel Kelly-Morgan

IPC: G01R31/308 ,  G01R1/07 ,  G01R31/26 ,  G01R31/265 ,  H01L21/66

CPC classification number: G01R1/071 ,  G01R31/2632 ,  G01R31/2635 ,  G01R31/2656 ,  H01L22/14

Abstract: Non-contact measurement of one or more electrical response characteristics of a p-n junction includes illuminating a surface of the p-n junction with light of a first intensity having a modulation or pulsed characteristic sufficient to establish a steady-state condition in a junction photovoltage (JPV) of the p-n junction, measuring a first JPV from the p-n junction within the illumination area, illuminating the surface of the p-n junction with light of an additional intensity, measuring an additional photovoltage from the portion of the p-n junction within the illumination area, determining a photocurrent density of the p-n junction at the first intensity. The non-contact measurement further includes determining the forward voltage, the saturation current density, the ideality factor or one or more I-V curves with the measured first photovoltage, the measured additional photovoltage and/or the determined photocurrent density of the p-n junction.

公开(公告)号：US09823198B2

公开(公告)日：2017-11-21

申请号：US14485468

申请日：2014-09-12

Applicant: KLA-Tencor Corporation

Inventor： Vladimir N. Faifer

IPC: G01N21/00 ,  G01N21/66 ,  G01N33/00 ,  G01R31/26

CPC classification number: G01N21/66 ,  G01N33/00 ,  G01N2033/0095 ,  G01R31/2635

Abstract: Non-contact measurement of one or more electrical response characteristics of a LED structure includes illuminating an illumination area of a surface of a light emitting diode structure with one or more light pulses, measuring a transient of a luminescence signal from a luminescence area within the illumination area of the light emitting diode structure with a luminescence sensor, determining a first luminescence intensity at a first time of the measured transient of the luminescence signal from the light emitting diode structure, determining a second luminescence intensity at a second time different from the first time of the measured transient of the luminescence signal from the light emitting diode structure and determining an intensity of the electroluminescence component of the luminescence signal from the light emitting diode structure based on the first luminescence signal and the second luminescence signal.

公开(公告)号：US20150061715A1

公开(公告)日：2015-03-05

申请号：US14475025

申请日：2014-09-02

Applicant: KLA-Tencor Corporation

Inventor： Vladimir N. Faifer ,  Ian Sierra Gabriel Kelly-Morgan

IPC: G01R1/07 ,  G01R31/26

CPC classification number: G01R1/071 ,  G01R31/2632 ,  G01R31/2635 ,  G01R31/2656 ,  H01L22/14

Abstract: Non-contact measurement of one or more electrical response characteristics of a p-n junction includes illuminating a surface of the p-n junction with light of a first intensity having a modulation or pulsed characteristic sufficient to establish a steady-state condition in a junction photovoltage (JPV) of the p-n junction, measuring a first JPV from the p-n junction within the illumination area, illuminating the surface of the p-n junction with light of an additional intensity, measuring an additional photovoltage from the portion of the p-n junction within the illumination area, determining a photocurrent density of the p-n junction at the first intensity. The non-contact measurement further includes determining the forward voltage, the saturation current density, the ideality factor or one or more I-V curves with the measured first photovoltage, the measured additional photovoltage and/or the determined photocurrent density of the p-n junction.

Abstract translation: pn结的一个或多个电响应特性的非接触测量包括用具有足以在结光电压（JPV）中建立稳态条件的调制或脉冲特性的具有第一强度的光照射pn结的表面， 在照明区域内从pn结测量第一JPV，用附加强度的光照射pn结的表面，从照明区域内的pn结的部分测量额外的光电压，确定 第一强度下pn结的光电流密度。 非接触测量还包括利用所测量的第一光电压，测量的附加光电压和/或确定的p-n结的光电流密度来确定正向电压，饱和电流密度，理想因子或一个或多个I-V曲线。