公开(公告)号：US10068323B2

公开(公告)日：2018-09-04

申请号：US15290990

申请日：2016-10-11

Applicant: KLA-Tencor Corporation

Inventor： Kaushik Sah ,  Andrew James Cross

IPC: G06T7/00 ,  H01L21/66 ,  H01L21/033

Abstract: A design aware system, method, and computer program product are provided for detecting overlay-related defects in multi-patterned fabricated devices. In use, a design of a multi-patterned fabricated device is received by a computer system. Then, the computer system automatically determines from the design one or more areas of the design that are prone to causing overlay errors. Further, an indication of the determined one or more areas is output by the computer system to an inspection system for use in inspecting a multi-patterned device fabricated in accordance with the design.

公开(公告)号：US20180321168A1

公开(公告)日：2018-11-08

申请号：US15671230

申请日：2017-08-08

Applicant: KLA-Tencor Corporation

Inventor： Kaushik Sah ,  Andrew James Cross ,  Antonio Mani

IPC: G01N23/225

Abstract: Information from metrology tools can be used during inspection or review with a scanning electron microscope. Metrology measurements of a wafer are interpolated and/or extrapolated over a field, which creates modified metrology data. The modified metrology data is associated with defect attributes from inspection measurements of a wafer. A wafer review sampling plan is generated based on the defect attributes and the modified metrology data. The wafer review sampling plan can be used during review of a wafer using the scanning electron microscope.

公开(公告)号：US20180300870A1

公开(公告)日：2018-10-18

申请号：US15683631

申请日：2017-08-22

Applicant: KLA-Tencor Corporation

Inventor： Allen Park ,  Moshe Preil ,  Andrew James Cross

IPC: G06T7/00 ,  G06K9/62

CPC classification number: G06T7/0004 ,  G06K9/6201 ,  G06T2207/30148

Abstract: A system, method, and computer program product are provided for systematic and stochastic characterization of pattern defects identified from a fabricated component. In use, a plurality of pattern defects detected from a fabricated component are identified. Additionally, attributes of each of the pattern defects are analyzed, based on predefined criteria. Further, a first set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be systematic pattern defects, and a second set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be stochastic pattern defects. Moreover, a first action is performed for the determined systematic pattern defects and a second action is performed for the determined stochastic pattern defects.

公开(公告)号：US10598617B2

公开(公告)日：2020-03-24

申请号：US15671230

申请日：2017-08-08

Applicant: KLA-Tencor Corporation

Inventor： Kaushik Sah ,  Andrew James Cross ,  Antonio Mani

IPC: G06K9/00 ,  G01N23/2251 ,  H01L21/66 ,  G01N21/956 ,  G01N21/88 ,  G01N21/95

Abstract: Information from metrology tools can be used during inspection or review with a scanning electron microscope. Metrology measurements of a wafer are interpolated and/or extrapolated over a field, which creates modified metrology data. The modified metrology data is associated with defect attributes from inspection measurements of a wafer. A wafer review sampling plan is generated based on the defect attributes and the modified metrology data. The wafer review sampling plan can be used during review of a wafer using the scanning electron microscope.

公开(公告)号：US10262408B2

公开(公告)日：2019-04-16

申请号：US15683631

申请日：2017-08-22

Applicant: KLA-Tencor Corporation

Inventor： Allen Park ,  Moshe Preil ,  Andrew James Cross

IPC: G06T7/00 ,  G06K9/62

Abstract: A system, method, and computer program product are provided for systematic and stochastic characterization of pattern defects identified from a fabricated component. In use, a plurality of pattern defects detected from a fabricated component are identified. Additionally, attributes of each of the pattern defects are analyzed, based on predefined criteria. Further, a first set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be systematic pattern defects, and a second set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be stochastic pattern defects. Moreover, a first action is performed for the determined systematic pattern defects and a second action is performed for the determined stochastic pattern defects.

公开(公告)号：US20170294012A1

公开(公告)日：2017-10-12

申请号：US15290990

申请日：2016-10-11

Applicant: KLA-Tencor Corporation

Inventor： Kaushik Sah ,  Andrew James Cross

IPC: G06T7/00 ,  H01L21/66

CPC classification number: G06T7/0004 ,  G06T2207/30148 ,  H01L21/0332 ,  H01L21/0338 ,  H01L22/12 ,  H01L22/20

Abstract: A design aware system, method, and computer program product are provided for detecting overlay-related defects in multi-patterned fabricated devices. In use, a design of a multi-patterned fabricated device is received by a computer system. Then, the computer system automatically determines from the design one or more areas of the design that are prone to causing overlay errors. Further, an indication of the determined one or more areas is output by the computer system to an inspection system for use in inspecting a multi-patterned device fabricated in accordance with the design.