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公开(公告)号：US20220075267A1
公开(公告)日：2022-03-10
申请号：US17528373
申请日：2021-11-17
Applicant: JSR CORPORATION
Inventor： Yuusuke OOTSUBO , Ryuichi SERIZAWA , Yuuki OZAKI , Kazunori SAKAI
Abstract: A film-forming composition includes: a metal compound; a nitrogen-containing organic compound; and a solvent. The nitrogen-containing organic compound is: a first compound including a nitrogen atom, an aliphatic hydrocarbon group, and at least two hydroxy groups; a second compound including a nitrogen-containing aromatic heterocycle and at least one hydroxy group; or a mixture thereof. A method of forming a resist pattern includes applying the film-forming composition directly or indirectly on a substrate to form a resist underlayer film. An organic-resist-film-forming composition is applied directly or indirectly on the resist underlayer film to form an organic resist film. The organic resist film is exposed to a radioactive ray. The organic resist film exposed is developed.
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2.发明申请公开(公告)号：US20200159121A1
公开(公告)日：2020-05-21
申请号：US16750616
申请日：2020-01-23
Applicant: JSR CORPORATION
Inventor： Ryuichi SERIZAWA , Nozomi SATOU , Yuusuke OOTSUBO
Abstract: A metal-containing film-forming composition for lithography with an extreme ultraviolet ray or electron beam includes a compound and a solvent. The compound includes a metal element and an oxygen atom, and further includes a metal-oxygen covalent bond. The metal element in the compound belongs to period 3 to period 7 of group 3 to group 15 in periodic table. The solvent includes a first solvent component having a normal boiling point of less than 160° C. and a second solvent component having a normal boiling point of no less than 160° C. and less than 400° C. The solvent includes an alcohol solvent. A percentage content of the alcohol solvent in the solvent is no less than 30% by mass.
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公开(公告)号：US20240184203A1
公开(公告)日：2024-06-06
申请号：US18422098
申请日：2024-01-25
Applicant: JSR CORPORATION
Inventor： Yuki OZAKI , Ryuichi SERIZAWA , Kengo HIRASAWA , Hiroki HIRABAYASHI
CPC classification number: G03F7/0392 , G03F7/0035 , G03F7/0047 , G03F7/0048 , G03F7/0382
Abstract: A composition includes a metal compound, a polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2), and a solvent. R1 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and R2 is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. R3 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L is a single bond or a divalent linking group; Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring members; R4 is a monovalent hydroxyalkyl group having 1 to 10 carbon atoms or a hydroxy group; and n is an integer of 0 to 8.
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公开(公告)号：US20180292753A1
公开(公告)日：2018-10-11
申请号：US15928806
申请日：2018-03-22
Applicant: JSR CORPORATION
Inventor： Hiromitsu TANAKA , Junya SUZUKI , Ryuichi SERIZAWA , Yuusuke OOTSUBO
IPC: G03F7/075 , G03F7/11 , G03F7/09 , H01L21/311 , C09D183/04
Abstract: Provided are: a composition for forming a silicon-containing film for EUV lithography capable of forming a silicon-containing film that is superior in an outgas-inhibiting property and enables formation of a resist pattern with a superior collapse-inhibiting property and a favorable configuration; a silicon-containing film for EUV lithography; and a pattern-forming method. The composition for forming a silicon-containing film for EUV lithography contains: a polysiloxane; a compound having an onium cation and a sulfonate anion; and a solvent, in which a sum of atomic masses of the atoms constituting the sulfonate anion is no less than 240, the sulfonate anion has a sulfonate group, and a carbon atom adjacent to the sulfonate group, and a fluorine atom does not bond to the carbon atom.
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公开(公告)号：US20220204535A1
公开(公告)日：2022-06-30
申请号：US17696982
申请日：2022-03-17
Applicant: JSR CORPORATION
Inventor： Yuusuke OOTSUBO , Ryuichi SERIZAWA , Kazunori SAKAI
Abstract: A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R2 and R3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R2 and R3 bond, or le and either R2 or R3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which le and either R2 or R3 bond.
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Patent Agency Ranking
公开(公告)号：US20200218161A1
公开(公告)日：2020-07-09
申请号：US16819315
申请日：2020-03-16
Applicant: JSR CORPORATION
Inventor： Ryuichi SERIZAWA , Nozomi SATOU , Yuusuke OOTSUBO , Tomoya TAJI , Tomoaki SEKO , Souta NISHIMURA
Abstract: A resist pattern-forming method includes treating a surface layer of a substrate with an ultraviolet ray, plasma, water, an alkali, an acid, hydrogen peroxide, ozone, or a combination thereof. The surface layer includes at least one metal element. A resist composition is applied on a surface of the surface layer to provide a resist film directly or indirectly on the surface. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film exposed is developed. The at least one metal element preferably belongs to period 3 to period 7 of group 3 to group 15 in periodic table.
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公开(公告)号：US20240369931A1
公开(公告)日：2024-11-07
申请号：US18769554
申请日：2024-07-11
Applicant: JSR CORPORATION
Inventor： Yuki OZAKI , Hiroki HIRABAYASHI , Kengo HIRASAWA , Ryuichi SERIZAWA
Abstract: A method for manufacturing a semiconductor substrate, includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; cleaning a periphery of the substrate with a cleaning liquid; and after cleaning the periphery, forming a resist pattern directly or indirectly on the resist underlayer film. The composition for forming a resist underlayer film includes: a metal compound; and a solvent. The cleaning liquid includes an organic acid.
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公开(公告)号：US20230250238A9
公开(公告)日：2023-08-10
申请号：US17887670
申请日：2022-08-15
Applicant: JSR CORPORATION
Inventor： Ryuichi SERIZAWA , Kengo HIRASAWA
CPC classification number: C08G77/24 , G03F7/0757 , G03F7/327 , G03F7/2004
Abstract: A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.
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公开(公告)号：US20220403116A1
公开(公告)日：2022-12-22
申请号：US17887670
申请日：2022-08-15
Applicant: JSR CORPORATION
Inventor： Ryuichi SERIZAWA , Kengo HIRASAWA
Abstract: A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.
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公开(公告)号：US20200333706A1
公开(公告)日：2020-10-22
申请号：US16923140
申请日：2020-07-08
Applicant: JSR CORPORATION
Inventor： Ryuichi SERIZAWA , Nozomi SATOU , Yuusuke OOTSUBO
Abstract: A patterned substrate-producing method includes applying a surface treatment agent on a surface layer of a substrate. The surface layer includes at least one metal element. A resist composition is applied on a surface of the surface layer to provide a resist film on the surface. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film exposed is developed to form a resist pattern. The substrate is etched using the resist pattern as a mask. The surface treatment agent includes: a polymer including a group including a polar group at at least one end of a main chain of the polymer; and a solvent.
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